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Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (σph), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR. spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm2) at room temperature (T R).

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A series of hydrogenated amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source and an excitation frequency of 27.12 MHz. Compared to the typical radio frequency deposition technique, the very high plasma excitation frequency increases the density of the electrons and decreases the electron temperature, which helps the dissociation of the SiH4 and CH4, and reduces the energetic ion impact on the growth surface of the thin film. Thus, dense-films with lower bulk density of states and higher growth rate are expected, as confirmed by spectroscopic ellipsometry data. Apart from that, a substantial reduction of bulk defects is achieved, allowing an improvement of the valence controllability (widening of the optical gap from about 1.9 to 3.6 eV). In this work results concerning the microstuctural and photoelectronic properties of the silicon carbide films will be discussed in detail, correlating them with the deposition process conditions used as well as with the gas phase composition of the mixtures used. © 2004 Elsevier B.V. All rights reserved.

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The aim of this paper is to compare the density of bulk states (DOS) of polymorphous silicon (pm-Si:H) films produced by plasma enhanced chemical vapor deposition at 13.56 and 27.12 MHz using the constant photocurrent method and the space charge limited current (SCLC) technique. The data achieved revealed that the set of films produced present similar DOS. Apart from that, data concerning the correlation of the deposition conditions that lead to the production of pm-Si:H as well as their characteristics, such as the hydrogen content and how hydrogen is bonded, will be discussed, giving special emphasis to the set of mechanical stresses developed. By doing so we could get a better understanding of the nature of hydrogen bonding in pm-Si:H films as well as to determine the role of the excitation frequency on the film's performances, where films with amounts of hydrogen around 20 at.% can have DOS as low as 8 × 10 14 cm-3 with Urbach energies in the range of 41-50 meV. © 2004 Elsevier B.V. All rights reserved.

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Polyethylene is one of the most widely used polymeric insulators in medium and high voltage power cables. However the importance of space charge distribution and its influence on the electrical aging in this polymer is not fully understood. The very good insulating properties of the material implying very long relaxation times (few days and even longer are usual) and low currents (few pA or below) make individual measurements of isothermal charge/discharge currents and thermostimulated currents difficult to analyze and reproduce. A single type of measurements does not take into account the space charge that remains trapped for long times. A combined procedure of isothermal and non-isothermal current measurements developed for high insulating polymers was used for low density polyethylene (LDPE) and crosslinked polyethylene (XLPE) films electrically aged. The press-molded LDPE and XLPE films were electrically aged under similar conditions using an AC electric field while immersed in a sodium chloride aqueous solution at constant temperature (electro-thermal aging). The use of the combined procedure for current measurement allowed obtaining information about space charge traps, activation energies and relaxation times for both LDPE and XLPE. This data was used to compare electrical aging under similar conditions for the two types of polyethylene.

Polyethylene is one of the most widely used polymeric insulators in medium and high voltage power cables. However the importance of space charge distribution and its influence on the electrical aging in this polymer is not fully understood. The very good insulating properties of the material implying very long relaxation times (few days and even longer are usual) and low currents (few pA or below) make individual measurements of isothermal charge/discharge currents and thermostimulated currents difficult to analyze and reproduce. A single type of measurements does not take into account the space charge that remains trapped for long times. A combined procedure of isothermal and non-isothermal current measurements developed for high insulating polymers was used for low density polyethylene (LDPE) and crosslinked polyethylene (XLPE) films electrically aged. The press-molded LDPE and XLPE films were electrically aged under similar conditions using an AC electric field while immersed in a sodium chloride aqueous solution at constant temperature (electro-thermal aging). The use of the combined procedure for current measurement allowed obtaining information about space charge traps, activation energies and relaxation times for both LDPE and XLPE. This data was used to compare electrical aging under similar conditions for the two types of polyethylene.

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This paper presents data concerning the composition structure and optical characteristics of polymorphous silicon films produced by plasma enhanced chemical vapour deposition at 27.12 MHz and determined respectively by infrared spectrometry, micro Raman, exodiffusion and spectroscopic ellipsometry measurements. When compared to the pm-Si:H films produced at 13.56 MHz, the films produced at 27.12 MHz present hydrogen contents in the range of 21 at%, the sharp peak ascribed to the exodifusion measurements is shifted towards high temperatures and the imaginary part of the dielectric function 〈ε2〉 is larger and shifted to high energies. Apart from that the peaks of the infrared spectra ascribed to the stretching modes shift towards high wave numbers and the half width of the micro Raman peaks shrinks, meaning that the films produced at 27.12 MHz are more compact and dense.

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The crystallization of a borosilicate glass, when compacts of powdered glass were sintered under various conditions, was investigated by dilatometric and XRD analysis. The dilatometry results from non-isothermal sintering experiments until 800°C, performed at different heating rates (1, 2, 5, 8 and 10°C/min), revealed that the compacts started to shrink above ∼ 600°C and that the shrinkage decreased with the increase of the heating rate for temperatures up to ∼750°C. Above this temperature, and specifically when the samples were heated at heating rates < 5°C /min, the shrinkage was hindered, while samples heated at heating rates ≥ 5°C/min showed continuous shrinkage. XRD results showed that the formation of cristobalite had occurred during the sintering at the lowest heating rates and therefore, the presence of this crystalline phase was affecting the shrinkage of the compacts, inhibiting further sintering of the glass. The crystallization of the glass when sintered at a temperature in the range 700-850°C and hold at the selected temperature during various times was also analysed. XRD results showed that both cristobalite and quartz were present in glass compacts sintered under particular conditions (for example, after heating during 24h at 725°C and 765°C). Quartz dissolution took place when the glass samples were sintered at 850°C. At this temperature and whatever the sintering time, cristobalite was the only crystalline phase present in the sintered compacts.

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In the last decade a considerable amount of research work has focused on distributed debugging, one of the crucial fields in the parallel software development cycle. The productivity of the software development process strongly depends on the adequate definition of what debugging tools should be provided, and what debugging methodologies and functionalities should these tools support. The work described in this dissertation was initiated in 1995, in the context of two research projects, the SEPP (Software Engineering for Parallel Processing) and HPCTI (High-Performance Computing Tools for Industry), both sponsored by the European Union in the Copernicus program, which aimed at the design and implementation of an integrated parallel software development environment. In the context of these projects, two independent toolsets have been developed, the GRADE and EDPEPPS parallel software development environments. Our contribution to these projects was in the debugging support. We have designed a debugging engine and developed a prototype, which was integrated the both toolsets (it was the only tool developed in the context of the SEPP and HPCTI projects which achieved such a result). Even after the closing of those research projects, further research work on distributed debugger has been carried on, which conducted to the re-design and re-implementation of the debugging engine. This dissertation describes the debugging engine according to its most up-to-date design and implementation stages. It also reposts some of the experimental work made with both the initial and the current implementations, and how it contributed to validate the design and implementations of the debugging engine.

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This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 μm (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device non-linearity increases to values above 4%.