Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 69-72.
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Fortunato, E., V. Assuncao, A. Marques, A. Goncalves, H. Aguas, L. Pereira, I. Ferreira, FMB Fernandes, R. J. C. Silva, and R. Martins. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-ZnO: Ga Thin Films Produced by RF Sputtering at Room Temperature: Effect of the Power Density."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 12-15.
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Moniz, António Elementos para o estudo de um caso de sucesso na montagem automóvel em Portugal: a Opel Portugal[Elements for the study of a success case in automobile assembly: the Opel Portugal]. University Library of Munich, Germany, 2004.
AbstractThe interest to study this factory of GM group in Portugal is due to the facto of being one of the oldest assembly lines of the automotive sector still operating in Portugal (it was founded in 1963). Besides that, it went recently across a very intensive technological change, and then would be interesting to know the organisation of work model chose. The Opel factory occupies at the moment the former one that belonged to Ford Lusitana. There it has being under production some modules that feed the assembly line on JIT and in sequence. Although there were severe difficulties to implement the case study at Opel, this report could be done using secondary information and several interviews at the factory and initial visits. This Opel factory was recently closed down in the frame of a GM European strategy for re-structuring.
Fortunate, E., Gonçalves De Carvalho Pimentel Lavareda Marques Martins A. C. N. "
Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer."
Materials Research Society Symposium Proceedings. Vol. 814. 2004. 231-236.
AbstractIn this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5×10-1 to 2.9×10-3 Ωcm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.
Carvalho, AL, A. Goyal, JAM Prates, DN Bolam, HJ Gilbert, VMR Pires, LMA Ferreira, A. Planas, MJ Romao, and CMGA Fontes. "
The family 11 carbohydrate-binding module of Clostridium thermocellum Lic26A-Cel5E accommodates beta-1,4- and beta-1,3-1,4-mixed linked glucans at a single binding site."
Journal of Biological Chemistry. 279 (2004): 34785-34793.
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Goulão, Miguel, and Fernando Brito Abreu. "
Formalizing Metrics for COTS."
International Workshop on Models and Processess for the Evaluation of COTS Components (MPEC 2004) at ICSE 2004. Eds. Eric Dubois, and Xavier Franch. Edimburgh, Scotland: IEE, 2004. 37-40.
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Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "
Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz."
Materials Science Forum. 455-456 (2004): 532-535.
AbstractThis paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.