Lanca, M. C., and J. Marat-Mendes. "
Dielectric breakdown statistics of polyethylene for progressively-censored data."
Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 602-605.
AbstractThe dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.
Lanca, M. C., and J. Marat-Mendes. "
Dielectric breakdown statistics of polyethylene for progressively-censored data."
Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 602-605.
AbstractThe dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.
Zhang, S.a b, Liao Xu Martins Fortunato Kong X. a Y. a. "
The diphasic nc-Si/a-Si:H thin film with improved medium-range order."
Journal of Non-Crystalline Solids. 338-340 (2004): 188-191.
AbstractA series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R H = [H2]/[SiH4]) and the substrate temperature (Ts) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H 2 * and their congeries. With the increase of T s from 150 to 275 °C, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. © 2004 Elsevier B.V. All rights reserved.
Águas, H.a, Pereira Ferreira Ramos Viana Andreu Vilarinho Fortunato Martins L. a I. a. "
Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes."
Journal of Non-Crystalline Solids. 338-340 (2004): 810-813.
AbstractThis work presents a study on the effect of an interfacial silicon oxide layer placed between Au and a-Si:H MIS (metal-insulator-semiconductor) photodiodes in their performances, by stopping the Au diffusion towards the a-Si:H. The results show that the Au diffuses very easily to the oxide free a-Si:H surface, even at room temperature, degrading the photodiode performance. On the other hand, the MIS photodiodes with the interfacial oxide show an improvement of their characteristics after annealing, function of its thickness, and degree of film's compactness. This effect is associated with the presence of oxide of thicknesses ≥5 Å at the Au/a-Si:H interface that prevents the Au diffusion and improves the photodiode characteristics, which does not happen when the interfacial oxide is absent. © 2004 Elsevier B.V. All rights reserved.
Águas, Hugo, Lu{\'ıs Pereira, Isabel Ferreira, A. R. Ramos, A. S. Viana, J. Andreu, Paula M. Vilarinho, Elvira Fortunato, and Rodrigo Martins. "
Effect of annealing on gold rectifying contacts in amorphous silicon."
Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 96-99.
Abstractn/a
Águas, H., Raniero Pereira Fortunato Martins L. L. E. "
Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon."
Thin Solid Films. 451-452 (2004): 264-268.
AbstractThis work presents a study performed on the deposition of pm-Si:H by plasma enhanced chemical vapor deposition using excitation frequencies of 13.56 and 27.12 MHz, where the interest of increasing the excitation frequency relies on higher plasma dissociation and reduced energy of ion bombardment, thus allowing the deposition of superior grade material at higher growth rates. The plasma impedance, which allows the monitoring of particle formation in the plasma, was correlated to the film properties, characterized by spectroscopic ellipsometry and hydrogen exodiffusion experiments. The set of data obtained show that by using the 27.12-MHz excitation frequency the hydrogen dilution and the r.f. power density needed to produce pm-Si:H can be reduced. Growth rates above 3.1 Å/s were obtained, the films being more dense and chemically more stable than those obtained with the standard 13.56 MHz. © 2003 Elsevier B.V. All rights reserved.
Águas, H.a, Goullet Pereira Fortunato Martins A. b L. a. "
Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes."
Thin Solid Films. 451-452 (2004): 361-365.
AbstractIn this work we present results of a study performed on metal-insulator-semiconductor (MIS) diodes with the following structure: substrate (glass)/Cr (2000 Å)/a-Si:H n+(400 Å)/a-Si:H i (5500 Å)/oxide (0-40 Å)/Au (100 Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106) and signal to noise (S/N) ratio (1×10 7 at -1 V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of hexamethyldisiloxane. However, in the case of deposited oxides, the breakdown voltage is higher, 30 V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ±1 V, but is relevant when high breakdown voltages are required. © 2003 Elsevier B.V. All rights reserved.
Ferro, M. C. a, M. H. V. a Fernandas, C. F. M. L. b Figueiredo, M. S. J. G. b Alendouro, and R. C. C. b Monteiro. "
Effect of TiO2 on the crystallization of fly-ash based glass-ceramics."
Materials Science Forum. 455-456 (2004): 831-834.
AbstractA batch of coal fly-ash, soda and lime was melted, quenched to a glass and then devitrified, by one-step heating cycles, forming coarse fibrous microstructures with pores and cracks, resulting in low strength materials. The crystallization behaviour of the based glass was further studied by adding a nucleating agent, TiC2. The resulting structural and microstrutural changes were investigated by differential thermal analysis, scanning electron microscopy, x-ray diffraction, dilatometry and density measurements. The results indicated that the addition of TiO2 could provide a finer grained microstructure, suitable for the production of structural materials.