The aim of this paper is to present a set of electric data concerning the performances before and after ageing of Cu-Sn-Cu joins used to solder power diodes and to compare the results achieved with the ones obtained in diodes soldered using the conventional technology. The set of results achieved show that the Cu-Sn-Cu joins present even better performances than the ones exhibited by diodes soldered using the conventional technology, without requiring the use of Mo discs to be inserted between the silicon crystal and the metal contacts (stud or finger) to compensate thermal mismatches.

In this paper we present an improved version of large area (5 mm × 80 mm) flexible position sensitive detectors deposited on polyimide (Kapton® VN) substrates with 75 μm thickness, produced by plasma enhanced chemical vapor deposition (PECVD). The structures presented by the sensors are Kapton/ZnO:Al/(pin)a-Si:H/Al and the heterostructure Kapton/Cr/(in)a-Si:H/ZnO:Al. These sensors were characterized by spectral response, photocurrent dependence as a function of light intensity and position detectability measurements. The set of data obtained on one-dimensional position sensitive detectors based on the heterostructure show excellent performances with a maximum spectral response of 0.12 A/W at 500 nm and a non-linearity of ±10%. © 2002 Elsevier Science B.V. All rights reserved.

Taking into account the global trends towards vertical de-integration and functional integration, the WorTiS project is expected to be able to determine to what extent the Portuguese automobile industry is experiencing far-reaching changes as far as innovative (post-fordist) work systems are concerned. One of the objectives is to reach wider conclusions regarding the sector under analysis within a new multi-disciplinary approach, in connection with other research networks (namely, GERPISA and IMVP-MIT). It will recover relevant information in automobile companies located in Portugal (like, Toyota, Citröen, FIAT, Renault, Ford, VW, UMM), in order to understand how concrete practices have being developed in time, and update the scientific knowledge with the development of new case studies (Mitsubishi, AutoEuropa, Opel-GM, and other sub-contracting firms). is intended to present a new fieldwork methodology in order to analyse the variety, and contradictory character, of changes in work practices. The analysis would focus on the cases of automotive firms that operated, and are still operating, in Portugal. The effectiveness of such a tool will last far beyond the project itself.

We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics. © 2001 Elsevier Science B.V. All rights reserved.

This paper presents the process conditions that lead to the production of nanostructured silicon films grown by plasma enhanced chemical vapour deposition close to the so-called gamma regime (powder formation), highly dense and with low density of bulk states. Thus, the powder management is one important issue to be addressed in this paper. As a general rule we observed that high quality films (low density of states and high μτ products) are obtained when films are grown under low ion bombardment at high hydrogen dilution and deposition pressure conditions, to allow the proper surface passivation and surface activation.