Moniz, António, Cláudia Gomes, Tiago Machado, and Paula Urze Information Society, Work and the Generation of New Forms of Social Exclusion (SOWING): National Report (Portugal). University Library of Munich, Germany, 2001.
AbstractThe choice over the Portuguese case studies was based on the sample constructed for the application of the firm questionnaires, during the second year of the SOWING project, 1999. This sample was fulfilled of firms among several activity sectors: textile, manufacturing, electronics, transports and software industry, based on NACE – codes (2 – digit level). Thus, we agreed to include in a new database the remaining questionnaires and construct a sample with 113 observations. Concerning the organisational change we make a distinction of three categories of change. First we analyse changes taking place at the inter-firm level (outsourcing, subcontracting, geographic relocation), followed by changes at the organisational level (deconcentration/decentralisation, reduction of hierarchical levels, introduction of cost and profit centres). The third kind of changes analysed will be those taking place at the workplace level (job enlargement/enrichment, changing character of work, work load). The Portuguese studied companies presents a relative uniform pattern considering the variables social competencies, practical knowledge, responsibility and specialized professional qualifications.
Martins, R., Águas Silva Ferreira Cabrita Fortunato H. V. I. "
Nanostructured silicon films produced by PECVD."
Materials Research Society Symposium - Proceedings. Vol. 664. 2001. A961-A966.
AbstractThis paper presents the process conditions that lead to the production of nanostructured silicon films grown by plasma enhanced chemical vapour deposition close to the so-called gamma regime (powder formation), highly dense and with low density of bulk states. Thus, the powder management is one important issue to be addressed in this paper. As a general rule we observed that high quality films (low density of states and high μτ products) are obtained when films are grown under low ion bombardment at high hydrogen dilution and deposition pressure conditions, to allow the proper surface passivation and surface activation.