In this paper the influence of the DC grid bias on the plasma impedance and the I-V behaviour of silane plasmas used to grow undoped amorphous silicon films by plasma enhanced chemical vapour deposition technique using a triode configuration at or close to the powder regime is studied. The aim is to determine the correlation between the r.f. power and the DC grid voltage with the plasma parameters, under isothermal gas conditions. The results should lead to the production of nanostructured films, with the required optoelectronic characteristics for photovoltaic applications. The results achieved show the existence of a boundary region close to the γ-regime (powder formed) where nanoparticles can be formed by moderated ion bombardment of the growing surface. This is characterised by the plasma resistance of the same order of magnitude of the plasma reactance. Under this condition, it is possible to grow amorphous silicon films that can incorporate nanoparticles, exhibiting photosensitivities of about 107 (two orders of magnitude larger than the one exhibited by films grown under conventional conditions) with densities of states determined by the constant photocurrent method below 3 × 1015 cm3. Apart from that, the growth of the films is less affected by light soaking than the conventional films grown by standard techniques. © 2001 Elsevier Science Ltd. All rights reserved.

Nitrous oxide (N(2)O) is a greenhouse gas, the third most significant contributor to global warming. As a key process for N(2)O elimination from the biosphere, N(2)O reductases catalyze the two-electron reduction of N(2)O to N(2). These 2 x 65 kDa copper enzymes are thought to contain a CuA electron entry site, similar to that of cytochrome c oxidase, and a CuZ catalytic center. The copper anomalous signal was used to solve the crystal structure of N(2)O reductase from Pseudomonas nautica by multiwavelength anomalous dispersion, to a resolution of 2.4 Angstrom. The structure reveals that the CuZ center belongs to a new type of metal cluster, in which four copper ions are liganded by seven histidine residues. N(2)O binds to this center via a single copper ion. The remaining copper ions might act as an electron reservoir, assuring a fast electron transfer and avoiding the formation of dead-end products.

In PE films aged under electric field the crystallisation of water (and melting of ice) has been studied by quadrupolar NMR, this technique allows one to determine the concentration of water as low as 10(-4). It is shown that the pore dimensions of the tracks forming the water trees of the order of 2.5 nm, are independent of the ageing time. The mobility of water in these water trees and in porous glass, of similar pore dimensions, are compared. (C) 2000 Elsevier Science Ltd. All rights reserved.

In PE films aged under electric field the crystallisation of water (and melting of ice) has been studied by quadrupolar NMR, this technique allows one to determine the concentration of water as low as 10(-4). It is shown that the pore dimensions of the tracks forming the water trees of the order of 2.5 nm, are independent of the ageing time. The mobility of water in these water trees and in porous glass, of similar pore dimensions, are compared. (C) 2000 Elsevier Science Ltd. All rights reserved.

The aerobic purification of Pseudomonas nautica 617 nitrous oxide reductase yielded two forms of the enzyme exhibiting different chromatographic behaviors. The protein contains six copper atoms per monomer, arranged in two centers named CUA and Cut. Cut could be neither oxidized nor further reduced under our experimental conditions, and exhibits a 4-line EPR spectrum (g(x)= 2.015, A(x) = 1.5 mT, g(y) = 2.071, A(y) = 2 mT, g(z) = 2.138, A(z) = 7 mT) and a strong absorption at similar to 640 nm. Cu-A can be stabilized in a reduced EPR-silent state and in an oxidized state with a typical 7-line EPR spectrum (g(x) g(y) = 2.021, A(x) = A(y) = 0 T, g(z) =0.178, A(z) = 4 mT) and absorption bands at 480, 540, and similar to 800 nm. The difference between the two purified forms of nitrous oxide reductase is interpreted as a difference in the oxidation state of the CuA center. In form A, CUA is predominantly oxidized (S = 1/2, Cu1.5+-Cu1.5+), while in form B it is mostly in the one-electron reduced state (S = 0, Cu1+-Cu1+). In both forms, Cu-Z remains reduced (S = 1/2). Complete crystallographic data at 2.4 Angstrom indicate that Cu-A is a binuclear site (similar to the site found in cytochrome c oxidase) and Cu-Z is a novel tetracopper cluster [Brown, K., et ai. (2000) Nat. Struct. Biol. (in press)]. The complete amino acid sequence of the enzyme was determined and comparisons made with sequences of other nitrous oxide reductases, emphasizing the coordination of the centers. A 10.3 kDa peptide copurified with both forms of nitrous oxide reductase shows strong homology with proteins of the heat-shock GroES chaperonin family.

Mycobacterium tuberculosis KatG is a multifunctional heme enzyme responsible for activation of the antibiotic isoniazid. A KatG(S315T) point mutation is found in >50% of isoniazid-resistant clinical isolates. Since isoniazid activation is thought to involve an oxidation reaction, the redox potential of KatG was determined using cyclic voltammetry, square wave voltammetry, and spectroelectrochemical titrations. Isoniazid activation may proceed via a cytochrome P450-like mechanism. Therefore, the possibility that substrate binding by KatG leads to an increase in the heme redox potential and the possibility that KatG(S315T) confers isoniazid resistance by altering the redox potential were examined. Effects of the heme spin state on the reduction potentials of KatG and KatG(S315T) were also determined. Assessment of the Fe3+/Fe2+ couple gave a midpoint potential of ca. -50 mV for both KatG and KatG(S315T). In contrast to cytochrome P450s, addition of substrate had no significant effect on either the KatG or KatG(S315T) redox potential. Conversion of the heme to a low-spin configuration resulted in a -150 to -200 mV shift of the KatG and KatG(S315T) redox potentials. These results suggest that isoniazid resistance conferred by KatG(S315T) is not mediated through changes in the heme redox potential. The redox potentials of isoniazid were also determined using cyclic and square wave voltammetry, and the results provide evidence that the ferric KatG and KatG(S315T) midpoint potentials are too low to promote isoniazid oxidation without formation of a high-valent enzyme intermediate such as compounds I and IT or oxyferrous KatG.

Radiationless transition rates to L1 vacancy states have been calculated ab initio in the Dirac-Fock approximation. The calculations include quantum-electrodynamic corrections. Results in the jj coupling scheme for all possible L1 transitions are tabulated for elements Yb and Hg.

The effects of Sn thickness electrodeposited over Cu on the structural and morphological performance of the joints formed were investigated. The electrical stability of the joints formed was analyzed under extreme aggressive conditions. Results indicated that the proposed soldering technology greatly satisfied the demands concerning soldering specifications.

This paper deals with the study of the role of gas temperature and of the ratio of r.f. power to gas flow on the particle’s formation in amorphous silicon films grown by plasma enhanced chemical vapour deposition technique, by monitoring the plasma impedance behaviour under different process conditions. The aim is to determine in which conditions the particles formed do not deteriorate the performances of the films grown or even can lead to an improvement of the properties of the films deposited. The results achieved show the existence of two main boundary regions (β- and θ-regions) separating the so-called α-regime (no powder formed) from the γ-regime (powder formed). Those regions are reached either by heating the gas, changing the gas pressure or using high power to gas flow ratios. In the β-region the probability of incorporating nanoparticles in the films is low and the films exhibit properties similar to those of the ones grown in the α-regime, with a low density of voids incorporated. In the θ-region small nanoparticles can be incorporated leading to films with density of states below 5×1015 cm-3, widened Urbach energies and photosensitivities about two orders of magnitude larger than that of conventional amorphous silicon grown in the α-regime. © 2000 Elsevier Science Ltd.

This paper deals with the study of the role of gas temperature and of the ratio of r.f. power to gas flow on the particle's formation in amorphous silicon films grown by the plasma enhanced chemical vapour deposition technique, by monitoring the plasma impedance behaviour under different process conditions. The results achieved show the existence of two main boundary regions separating the so-called α-regime (no powder formed) from the γ-regime (powder formed). Those regions are reached either by heating the gas, changing the gas pressure or using high power to gas flow ratios, corresponding to the establishment of a balance between the plasma resistance and the plasma reactance. In the β-region the probability to incorporate nanoparticles in the films is low and the films exhibit photosensitivity's of about 105 with density of states determined by the constant photocurrent method below 6×1015 cm-3 with Urbach energies below 50 meV. In the θ-region small nanoparticles can be incorporated leading to films with density of states below 3×1015 cm-3, with Urbach energies above 50 meV and photosensitivity's above 106, about two orders of magnitude larger than that of conventional amorphous silicon grown in the α-regime.

This paper deals with a new process to improve the stability of a-Si:H pin solar cells deposited in a single batch process by proper passivation of the interfaces. The process consists in removing partially a deposited sacrificial oxide layer grown between the p/i or i/n interfaces by SF6 etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls and the substrate surface. The results achieved in laboratory samples lead to devices in which the fill factor and short circuit current density were improved respectively towards 75% and 16.5 mA cm-2, with a final working efficiency of about 9.5%. © 2001 Elsevier Science Ltd. All rights reserved.