Nandy, Suman, Goncalo Goncalves, Joana Vaz Pinto, Tito Busani, Vitor Figueiredo, Luis Pereira, Rodrigo Ferrao Paiva Martins, and Elvira Fortunato. "
Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars."
Nanoscale. 5.23 (2013): 11699-11709.
AbstractThe present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.
Araújo, João, Miguel Goulão, Ana Moreira, Ines Simão, Vasco Amaral, and Elisa Baniassad. "
Advanced Modularity for Building SPL Feature Models: a Model-Driven Approach."
28th ACM Symposium on Applied Computing, Requirements Engineering Track, ACM-SAC 2013. Coimbra, Portugal: ACM, 2013.
AbstractFeature Models are commonly used to specify commonalities and variabilities in Software Product Lines (SPL). Our goal is to enhance feature modeling with traceability and improved support for crosscutting concerns. While traceability will show the features’ requirement-origins, providing means to reason about
their existence, crosscutting concerns will be handled through advanced modularity mechanisms (e.g. aspects), making the impact of changes to SPL models less difficult to understand and analyze. The result is Theme/SPL, a novel SPL requirements technique based on a concern-driven approach (Theme/Doc). Theme/SPL includes the proposal of a domain-specific language for specifying Theme/Doc models and uses model-driven development to generate automatically feature models from them. We show the applicability of the technique through a case study using a within-group design to evaluate the final results and tools developed.