Extended-Gate ISFETs Based on Sputtered Amorphous Oxides

Citation:
Pinto, J. V., R. Branquinho, P. Barquinha, E. Alves, R. Martins, and E. Fortunato, "Extended-Gate ISFETs Based on Sputtered Amorphous Oxides", Journal of Display Technology, vol. 9, issue 9, pp. 729-734, 2013.

Abstract:

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Notes:

ORCID Reference type: [bibtex]; ORCID Reference: [@article{a_Alves_Martins_Fortunato_2013, title={Extended-Gate ISFETs Based on Sputtered Amorphous Oxides}, volume={9}, url={http://dx.doi.org/10.1109/JDT.2012.2227298}, DOI={10.1109/JDT.2012.2227298}, number={9}, journal={Journal of Display Technology}, publisher={Institute of Electrical and Electronics Engineers}, author={Pinto, Joana V. and Branquinho, Rita and Barquinha, Pedro and Alves, Eduardo and Martins, Rodrigo and Fortunato, Elvira}, year={2013}, month={Sep}, pages={729-734}}]

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