Rodrigo Martins

Results are presented which are geared towards an understanding of the influence of powder formation during film growth. Plasma chemistry is correlated with the morphology, structure (inferred through infrared spectroscopy, scanning electron microscopy and X-ray diffraction) electro-optical and density of states of intrinsic films deposited under continuous and power modulated operation. Results show that for modulation frequencies where no powder formation occurs and low substrate temperatures T (150°C), silane decomposition gives rise to the growth of inhomogeneous films while in the high modulation frequency regime, at the same temperature, the anions and powder are trapped resulting in films with high deposition rates and low defect density.

The special Professor Walter E. Spear commemoration issue of the Philosophical Magazine, published in October 2009, contains papers which cover the numerous relevant issues, driven by commercial applications, primarily solar energy and displays. Kocka reviews the complex microstructure of crystallites embedded in the amorphous silicon tissue, the transport mechanism is determined by the conductive grains and influenced by the passivation through H at the grain boundaries. Hugger and co-researchers report on transient photocapacitance spectroscopy and drive-level capacitance profiling as a way of elucidating the fundamental electronic properties of hydrogenated ncSi. Tawada recounts the history of a-Si:H pin heterojunction solar cells, emphasizing the role of the p-type silicon carbide layer in the improvement of the device. Schubert and colleagues focus their work on the production of flexible PV modules with many applications in the architectural arena or integrated into clothing.

A new high quantum efficiency gallium phosphide Schottky photodiode has been developed by spray deposition of heavily doped tin oxide films on n-type epitaxial structures, as an alternative to the conventional Schottky photodiodes using a semitransparent gold electrode. It is shown that fluorine-doped tin oxide films are more effective as transparent electrodes than tin-doped indium oxide films. The proposed photodiodes have a typical responsivity near 0.33 A W-1 at 440 nm and an unbiased internal quantum efficiency close to 100%, in the range from 250 to 450 nm. The model used to calculate the internal quantum efficiency (based on the optical constants of tin oxide films and gallium phosphide epitaxial layers) is found to be in good agreement with the experimental results. The data show that the quantum efficiency is strongly dependent on the thickness of the transparent electrode, owing to optical interference effects. The noise equivalent power for 440 nm is 2.7 × 10-15 W Hz-1/2, which indicates that these photodiodes can be used for accurate measurements in the short-wavelength range, even in the presence of stronger infrared background radiation.

We have developed new types of functional and smart optical silicon sensors, based on ITO/multichannel insulator/silicon structures, which are able to execute electronic functions such as amplifying the photocurrent (without avalanche multiplication), transforming the input optical signal into a radio frequency output signal and transforming the analogue input optical signal to a digital output form, without external active electronic components. These new functional optical sensors allow as substantial simplification of the registration of optical signals as well as of the electronic scheme to be used.

This work reports the structure and electro-optical characteristics of different metal oxide films obtained by spray pyrolysis on heated glass substrates, aiming their application in optoelectronic devices. The results show that this technique leads to thin films with properties ranging from dielectric to degenerate semiconductors, offering the following advantages: simplicity, low cost, high productivity and the possibility of covering large areas, highly important for large area device applications.

We present the modelling of a new two-terminal and low-voltage operating optoelectronic device based on MIS silicon structure with multichannel insulator and having as gate a transparent metallic tin-doped indium oxide (ITO) layer deposited by spray pyrolysis technique over the insulator layer. ITO layer has a multiple non-rectifier electrical contact with silicon substrate, in the SiO2 channel's region. Construction details of the process, together with its operating characteristics are given. The devices developed do not require external active electronic components (transistors, microschemes) to execute their functions and to transform analogue input optical signals to digital output form, highly important for a wide range of optoelectronic applications.

High quantum efficiency, UV-enhanced monocrystalline zinc sulphide optical sensors for precise radiometric and spectroscopic measurements have been developed by spray deposition of heavy fluorinedoped tin oxide thin films with carrier concentration near 1021 cm-3 onto the surface of zinc sulphide monocrystals as an alternative to the UV-enhanced silicon photodetectors as well as to new detectors based on SiC and GaN. The fabricated sensors have an unbiased internal quantum efficiency that was nearly 100% from 250 to 320 nm, and the typical sensitivity at 290 nm is 0.15 A/W. The sensors were insensitive to solar radiation in earth's conditions and can be used as solar blind photodetectors for precision UV-measurements under direct solar illumination, both terrestrial and space applications.

In this paper we report the success in fabricating FTO/Si surface-barrier photodiodes produced by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: 1. X-Ray detectors with energy resolution of 16.5% at 661.5 keV (137Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm2 operating at 5 V reverse bias, scintillator based on monocrystalline Bi4Ge3O12 and preamplifier (noise of 250 e- RMS.); 2. Fast-response surface-barrier FTO/n–n+ silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at λ = 0.85 μm; 3. Radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 μm thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the `critical fluence' value (3×1014 cm-2) for neutron irradiation.

UV-enhanced monocrystalline zinc sulphide optical sensors with high quantum efficiency have been developed by spray deposition of heavy fluorine-doped tin oxide (FTO) thin films onto the surface of zinc sulphide monocrystals as an alternative to the UV-enhanced high-efficiency silicon photodetectors commonly used in precise radiometric and spectroscopic measurements as well as to new sensors based on SiC and GaN. The fabricated sensors have an unbiased internal quantum efficiency that is nearly 100% from 250 to 320 nm, and the typical sensitivity at 250 nm is 0.15 A W-1. The sensors are insensitive to solar radiation in conditions on the earth and can be used as solar blind photodetectors for precision UV measurements under direct solar illumination for both terrestrial and space applications.

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1-xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications.

We have developed new types of functional and smart optical silicon sensors, based on ITO/multichannel insulator/silicon structures, which are able to execute electronic functions such as amplifying the photocurrent (without avalanche multiplication), transforming the input optical signal into a radio frequency output signal and transforming the analogue input optical signal to a digital output form, without external active electronic components. These new functional optical sensors allow a substantial simplification of the registration of optical signals as well as of the electronic scheme to be used. © 1998 Elsevier Science S.A. All rights reserved.

This work's aim is to report for the first time the cubic to hexagonal phase transition in tin-doped In2O3 films with a Sn/In atomic ratio of 0.03, fabricated at low temperature and normal pressure from alcoholic solution of InCl3 and SnCl4. The performed X-ray diffraction measurements show a difference between crystallographic symmetry of thin (100 nm) and thick (400 nm) films prepared in the same conditions: the structure of thick films can be related to high pressure In2O3 hexagonal system with a preferred orientation of c-axis parallel to the substrate surface, while thin films present a cubic symmetry with columnar (400) grain orientation. Phase transition nature is connected with non-axial tensile deformation of indium oxide grid due to insertion of chlorine ions in the position of two diagonally opposite oxygen vacancies in In2O3 network.

We report the properties and optoelectronic applications of transparent and conductive indium and tin oxide films prepared by the spray pyrolysis method and doped with Sn or F, respectively. The film properties have been measured using X-ray diffraction, optical and electrical absorption. As examples of applications we produced a set of selective optical detectors for different spectral regions, covering the wavelength range from 0.25 to 1.1 μm, based on metal oxide-semiconductor heterostructures and using different substrates such as: GaP, GaSe, AlxGa1-xAs, GaAs and Si. The fabricated devices exhibit several features such as: production simplicity, high quantum efficiency, uniform sensitivity over the entire active area and a high response speed. Finally, we present a high quantum efficiency and solar blind monocrystalline zinc sulphide optical sensor fabricated by spray deposition as an alternative to the ultraviolet-enhanced SiC and GaN photodetectors and the performances of a solar cell. © 1998 Elsevier Science B.V. All rights reserved.

UV-enhanced monocrystalline zinc sulphide optical sensors with high quantum efficiency have been developed by spray deposition of heavy fluorine-doped tin oxide (FTO) thin films onto the surface of zinc sulphide monocrystals as an alternative to the UV-enhanced high-efficiency silicon photodetectors commonly used in precise radiometric and spectroscopic measurements as well as to new sensors based on SiC and GaN. The fabricated sensors have an unbiased internal quantum efficiency that is nearly 100% from 250 to 320 nm, and the typical sensitivity at 250 nm is 0.15 A W-1. The sensors are insensitive to solar radiation in conditions on the earth and can be used as solar blind photodetectors for precision UV measurements under direct solar illumination for both terrestrial and space applications. © 1998 Elsevier Science S.A. All rights reserved.

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1 - xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications. © 1998 Elsevier Science S.A. All rights reserved.

Electrochemically active bacteria (EAB) have the capability to transfer electrons to cell exterior, a feature that is currently explored for important applications in bioremediation and biotechnology fields. However, the number of isolated and characterized EAB species is still very limited regarding their abundance in nature. Colorimetric detection has emerged recently as an attractive mean for fast identification and characterization of analytes based on the use of electrochromic materials. In this work, WO 3 nanoparticles were synthesized by microwave assisted hydrothermal synthesis and used to impregnate non-treated regular office paper substrates. This allowed the production of a paper-based colorimetric sensor able to detect EAB in a simple, rapid, reliable, inexpensive and eco-friendly method. The developed platform was then tested with Geobacter sulfurreducens, as a proof of concept. G. sulfurreducens cells were detected at latent phase with an RGB ratio of 1.10 ± 0.04, and a response time of two hours.

The model presented is based on the heat transfer and energy balance equations that rule the set of physical and chemical interactions that take place on the gas phase of a growth process, assuming that the deposition process occurs under laminar dynamic flow conditions (Knudsen number below 1). In these conditions, the chemistry and physics of the process involved in the growth mechanism of silicon thin films produced by the hot wire or the hot-wire plasma assisted technique can be proper derived by balance equations that supply information about how the plasma density, the gas dilution and the gas temperature influence the growth mechanism and the equilibrium of the concentration of species presented on the growth surface. The model developed establishes a relation between the abundance species formed and the parameters initiators of the process such as the filament temperature and the rf power density used.

This paper deals with the study of the role of gas temperature and of the ratio of r.f. power to gas flow on the particle’s formation in amorphous silicon films grown by plasma enhanced chemical vapour deposition technique, by monitoring the plasma impedance behaviour under different process conditions. The aim is to determine in which conditions the particles formed do not deteriorate the performances of the films grown or even can lead to an improvement of the properties of the films deposited. The results achieved show the existence of two main boundary regions (β- and θ-regions) separating the so-called α-regime (no powder formed) from the γ-regime (powder formed). Those regions are reached either by heating the gas, changing the gas pressure or using high power to gas flow ratios. In the β-region the probability of incorporating nanoparticles in the films is low and the films exhibit properties similar to those of the ones grown in the α-regime, with a low density of voids incorporated. In the θ-region small nanoparticles can be incorporated leading to films with density of states below 5×1015 cm-3, widened Urbach energies and photosensitivities about two orders of magnitude larger than that of conventional amorphous silicon grown in the α-regime. © 2000 Elsevier Science Ltd.

The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD). The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

The influence of U.V. light on the transport properties of a-Si : H films during its growth in a r.f. double chamber system was investigated by conductivity, optical absorption, I.R. absorption, spectral photoconductivity and X-ray diffraction measurements. It was concluded that the presence of U.V. light during the deposition process controls the way how hydrogen is incorporated in the structure as well as the impurity atoms. The microcrystalline films investigated present sharp peaks in the I.R. spectra. Both boron and phosphorus doped films show conductivities higher than 10 S cm-1 and estimated crystalline sizes of the order of 80 Å. © 1987.

In this paper we report results concerning the use of paper as substrate and as an electronic component for the next generation of sustainable low cost electronic systems, where different examples of applications are given. © 2013 Society for Information Display.

Amorphous/nanocrystalline silicon p i′ i i′ n devices fabricated on micromachined glass substrates are integrated with oligonucleotide-derivatized gold nanoparticles for a colorimetric detection method. The method enables the specific detection and quantification of unamplified nucleic acid sequences (DNA and RNA) without the need to functionalize the glass surface, allowing for resolution of single nucleotide differences between DNA and RNA sequences-single nucleotide polymorphism and mutation detection. The detector's substrate is glass and the sample is directly applied on the back side of the biosensor, ensuring a direct optical coupling of the assays with a concomitant maximum photon capture and the possibility to reuse the sensor. © 2007 American Institute of Physics.

The effects of Sn thickness electrodeposited over Cu on the structural and morphological performance of the joints formed were investigated. The electrical stability of the joints formed was analyzed under extreme aggressive conditions. Results indicated that the proposed soldering technology greatly satisfied the demands concerning soldering specifications.

We have deposited by Plasma Enhanced Chemical Vapour Deposition phosphorus doped amorphous and microcrystalline silicon films, as a function of the RF power (10-300 W), using a PH3/(SiH4 + H2 + He)mixture. It was found that films microcrystallization occurs for powers above 130 W, where a clear phase transition occurs. The microcrystalline films produced present high dark conductivities and optical band gaps, where the crystalline volume fraction is above 25%, as revealed by micro Raman spectroscopy. The Hall mobility have been also determined for amorphous and microcrystalline films, as a function of temperature, in the range 280-340 K. The data show that for the microcrystalline films the conduction is mainly in the extended states of the microcrystals, confirming also the double sign anomaly. That is, for n-type films, the sign is positive for the amorphous case while it is negative for the microcrystalline case. © 1998 Elsevier Science S.A.

The objective of this work is to provide a basis for the interpretation of the a-Si:H photodiode behaviour under low illumination level conditions, where a lateral leakage current plays an important role on the devices' performances when the doped collecting layer can not be considered a true equipotential. To determine this effect, a-Si:H p.i.n devices with small metal dot contacts, matrix distributed, were produced and analysed before and after etching the surrounding doped region of the metal collecting contact. The experimental data fit a model that includes the contribution of a lateral leakage current influencing the J-V characteristics, responsivity and the apparent light degradation behaviour of the device.