n/a

n/a

The aim of this paper is to present results concerning the morphology, structure, mechanical and electrical characteristics of the new proposed Cu-Sn metallurgical alloy, which may be used in electronic joins. By proper choice of process temperature and pressure, Cu coated surfaces are soldered using Sn as pre-form. The main results achieved indicate that the formation of Cu3Sn phase begins at a temperature of about 473 K and that the Sn thickness (dSn) needed is slightly above 7 μm. Due to join wettability, higher temperatures (between 523 and 573 K) and dSn above 35 μm are required to form joins within the specifications of the electronic industry.

n/a

The aerobic purification of Pseudomonas nautica 617 nitrous oxide reductase yielded two forms of the enzyme exhibiting different chromatographic behaviors. The protein contains six copper atoms per monomer, arranged in two centers named CUA and Cut. Cut could be neither oxidized nor further reduced under our experimental conditions, and exhibits a 4-line EPR spectrum (g(x)= 2.015, A(x) = 1.5 mT, g(y) = 2.071, A(y) = 2 mT, g(z) = 2.138, A(z) = 7 mT) and a strong absorption at similar to 640 nm. Cu-A can be stabilized in a reduced EPR-silent state and in an oxidized state with a typical 7-line EPR spectrum (g(x) g(y) = 2.021, A(x) = A(y) = 0 T, g(z) =0.178, A(z) = 4 mT) and absorption bands at 480, 540, and similar to 800 nm. The difference between the two purified forms of nitrous oxide reductase is interpreted as a difference in the oxidation state of the CuA center. In form A, CUA is predominantly oxidized (S = 1/2, Cu1.5+-Cu1.5+), while in form B it is mostly in the one-electron reduced state (S = 0, Cu1+-Cu1+). In both forms, Cu-Z remains reduced (S = 1/2). Complete crystallographic data at 2.4 Angstrom indicate that Cu-A is a binuclear site (similar to the site found in cytochrome c oxidase) and Cu-Z is a novel tetracopper cluster [Brown, K., et ai. (2000) Nat. Struct. Biol. (in press)]. The complete amino acid sequence of the enzyme was determined and comparisons made with sequences of other nitrous oxide reductases, emphasizing the coordination of the centers. A 10.3 kDa peptide copurified with both forms of nitrous oxide reductase shows strong homology with proteins of the heat-shock GroES chaperonin family.

Mycobacterium tuberculosis KatG is a multifunctional heme enzyme responsible for activation of the antibiotic isoniazid. A KatG(S315T) point mutation is found in >50% of isoniazid-resistant clinical isolates. Since isoniazid activation is thought to involve an oxidation reaction, the redox potential of KatG was determined using cyclic voltammetry, square wave voltammetry, and spectroelectrochemical titrations. Isoniazid activation may proceed via a cytochrome P450-like mechanism. Therefore, the possibility that substrate binding by KatG leads to an increase in the heme redox potential and the possibility that KatG(S315T) confers isoniazid resistance by altering the redox potential were examined. Effects of the heme spin state on the reduction potentials of KatG and KatG(S315T) were also determined. Assessment of the Fe3+/Fe2+ couple gave a midpoint potential of ca. -50 mV for both KatG and KatG(S315T). In contrast to cytochrome P450s, addition of substrate had no significant effect on either the KatG or KatG(S315T) redox potential. Conversion of the heme to a low-spin configuration resulted in a -150 to -200 mV shift of the KatG and KatG(S315T) redox potentials. These results suggest that isoniazid resistance conferred by KatG(S315T) is not mediated through changes in the heme redox potential. The redox potentials of isoniazid were also determined using cyclic and square wave voltammetry, and the results provide evidence that the ferric KatG and KatG(S315T) midpoint potentials are too low to promote isoniazid oxidation without formation of a high-valent enzyme intermediate such as compounds I and IT or oxyferrous KatG.

Radiationless transition rates to L1 vacancy states have been calculated ab initio in the Dirac-Fock approximation. The calculations include quantum-electrodynamic corrections. Results in the jj coupling scheme for all possible L1 transitions are tabulated for elements Yb and Hg.

In this work we present a study of influence of ion bombardment on the optical, electrical and compositional properties of the intrinsic amorphous silicon films deposited in a modified triode plasma-enhanced chemical vapour deposition (PECVD) reactor. The application of a DC voltage to a grid placed in front of the r.f. electrode allowed us to control the energy and polarity of the ions striking the substrate during film growth. The results show a variation by two orders of magnitude in the dark conductivity from 10-10 to 6.2 × 10-12 (Ω cm)-1, while the photosensitivity varied from 2 × 105 to 2 × 107. A process plasma that takes place in the γ-type regime was associated with the use of a negative bias, while a process plasma like the one of the α-type regime was associated with the use of a positive bias. The films deposited with a bias ≈ 38 V are highly intrinsic and the abrupt change in the conductivity properties observed at this bias is attributed to a change in the density of the states ascribed to the position of the Fermi level. That is, a precise control of the energy of the ions striking the substrate during the film growth leads to improved film optoelectronic properties, very important for device applications. © 2001 Elsevier Science Ltd. All rights reserved.

The effects of Sn thickness electrodeposited over Cu on the structural and morphological performance of the joints formed were investigated. The electrical stability of the joints formed was analyzed under extreme aggressive conditions. Results indicated that the proposed soldering technology greatly satisfied the demands concerning soldering specifications.

This paper deals with the study of the role of gas temperature and of the ratio of r.f. power to gas flow on the particle’s formation in amorphous silicon films grown by plasma enhanced chemical vapour deposition technique, by monitoring the plasma impedance behaviour under different process conditions. The aim is to determine in which conditions the particles formed do not deteriorate the performances of the films grown or even can lead to an improvement of the properties of the films deposited. The results achieved show the existence of two main boundary regions (β- and θ-regions) separating the so-called α-regime (no powder formed) from the γ-regime (powder formed). Those regions are reached either by heating the gas, changing the gas pressure or using high power to gas flow ratios. In the β-region the probability of incorporating nanoparticles in the films is low and the films exhibit properties similar to those of the ones grown in the α-regime, with a low density of voids incorporated. In the θ-region small nanoparticles can be incorporated leading to films with density of states below 5×1015 cm-3, widened Urbach energies and photosensitivities about two orders of magnitude larger than that of conventional amorphous silicon grown in the α-regime. © 2000 Elsevier Science Ltd.

This paper deals with the study of the role of gas temperature and of the ratio of r.f. power to gas flow on the particle's formation in amorphous silicon films grown by the plasma enhanced chemical vapour deposition technique, by monitoring the plasma impedance behaviour under different process conditions. The results achieved show the existence of two main boundary regions separating the so-called α-regime (no powder formed) from the γ-regime (powder formed). Those regions are reached either by heating the gas, changing the gas pressure or using high power to gas flow ratios, corresponding to the establishment of a balance between the plasma resistance and the plasma reactance. In the β-region the probability to incorporate nanoparticles in the films is low and the films exhibit photosensitivity's of about 105 with density of states determined by the constant photocurrent method below 6×1015 cm-3 with Urbach energies below 50 meV. In the θ-region small nanoparticles can be incorporated leading to films with density of states below 3×1015 cm-3, with Urbach energies above 50 meV and photosensitivity's above 106, about two orders of magnitude larger than that of conventional amorphous silicon grown in the α-regime.

n/a

n/a

n/a

In this work we present a study performed in a plasma-enhanced chemical vapour deposition reactor, where different rf electrode configurations were used with the aim of achieving conditions that lead to growth of highly uniform amorphous silicon films, with the required electronic quality, at high growth rates. This study consists in determining the plasma characteristics under different electrode configurations, in an argon plasma, using as diagnostic tools a Langmuir probe and impedance probe. These results were correlated with the hydrogenated amorphous silicon films produced, thereby allowing us to establish the best electrode configuration to grow electronic-grade-quality amorphous silicon films.

n/a

n/a

n/a

This paper deals with a new process to improve the stability of a-Si:H pin solar cells deposited in a single batch process by proper passivation of the interfaces. The process consists in removing partially a deposited sacrificial oxide layer grown between the p/i or i/n interfaces by SF6 etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls and the substrate surface. The results achieved in laboratory samples lead to devices in which the fill factor and short circuit current density were improved respectively towards 75% and 16.5 mA cm-2, with a final working efficiency of about 9.5%. © 2001 Elsevier Science Ltd. All rights reserved.

n/a

In today's main crystalline silicon (c-Si) applications in MOS (metal-oxide-silicon), MIS (metal-insulator-semiconductor) or SIS (Semiconductor-Insulator-Semiconductor), the growing of the oxide layer plays the main role, dictating the device performances, in particular if it has to be grown by a low temperature process. Of fundamental importance is the SiO2 interface with the c-Si. A very low defect density interface is desirable so that the number of trapping states can be reduced and the devices performance optimised. A two step low temperature oxidation process is proposed. The process consists of growing first a layer of oxide by a wet process and then treating the grown oxide with an oxygen plasma. The oxygen ions from the plasma bombard the oxide causing compaction of the oxide and a decrease in the interface roughness and defect density. Infrared spectroscopy and spectroscopic ellipsometry measurements were performed on the samples to determine the oxide thickness, optical and structural properties. SIS structures were built and capacitance measurements were performed under dark and illuminated conditions from which were inferred the interface defect density and correlated with the oxide growth process.

Mycobacterium tuberculosis KatG is a multifunctional heme enzyme responsible for activation of the antibiotic isoniazid. A KatG(S315T) point mutation is found in >50% of isoniazid-resistant clinical isolates. Since isoniazid activation is thought to involve an oxidation reaction, the redox potential of KatG was determined using cyclic voltammetry, square wave voltammetry, and spectroelectrochemical titrations. Isoniazid activation may proceed via a cytochrome P450-like mechanism. Therefore, the possibility that substrate binding by KatG leads to an increase in the heme redox potential and the possibility that KatG(S315T) confers isoniazid resistance by altering the redox potential were examined. Effects of the heme spin state on the reduction potentials of KatG and KatG(S315T) were also determined. Assessment of the Fe3+/Fe2+ couple gave a midpoint potential of ca. -50 mV for both KatG and KatG(S315T). In contrast to cytochrome P450s, addition of substrate had no significant effect on either the KatG or KatG(S315T) redox potential. Conversion of the heme to a low-spin configuration resulted in a -150 to -200 mV shift of the KatG and KatG(S315T) redox potentials. These results suggest that isoniazid resistance conferred by KatG(S315T) is not mediated through changes in the heme redox potential. The redox potentials of isoniazid were also determined using cyclic and square wave voltammetry, and the results provide evidence that the ferric KatG and KatG(S315T) midpoint potentials are too low to promote isoniazid oxidation without formation of a high-valent enzyme intermediate such as compounds I and IT or oxyferrous KatG.

{We construct surface type measures on the level sets for the renormalized energy, which is an invariant quantity for the two dimensional periodic Euler flow, and prove the existence of weak solutions living on such level sets. Other classes of invariant measures for the motion are also introduced.}

{We prove, under certain regularity assumptions on the coefficients, that tangent processes (namely semimartingales d xi(tau) = a dx(tau) + b d tau where a is an antisymmetric matrix) generate flows on the classical Wiener space. Main applications of the result can be found in the study of the geometry of path spaces. (C) 1999 Academic Press.}