In this work we present data concerning the structure, composition and electro-optical performances of nanocrystalline silicon carbide doped films produced at the different filament temperatures and hydrogen dilution ratios. The XRD spectra reveal the presence of the typical Si peaks ascribed to (111) (220) and (311) diffraction planes, where no traces of the carbon peaks were found. The average grain sizes ranges from 10 nm to 30 nm, depending on the temperature of filament and hydrogen dilution used. We observed an enhancement of the peak ascribed to the (220) plane when high H dilution rates are used, meaning that the film starts being textured. The infrared data reveal the typical silicon carbide modes and a hydrogen content that varies from 3% to 1%, with the increase of the filament temperature. Besides that, the IR spectra show the typical SiO2 and SiO modes, associated to the oxide species that are mainly incorporated in the surface of the films and can be removed by proper wet etching. The planar conductivity is enhanced as the temperature of the filament is increased, being the highest conductivity achieved in the range of 0.2 (Ωcm)-1 and almost non activated. © 1998 Elsevier Science Ltd. All rights reserved.

The aim of this paper is to present results on a new soldering process based on the low-temperature solidification of intermetallic phases from the system Cu-Sn-Cu which can be employed to form a heat-resistant die-attach as well as signal and power electric contacts. Because of the total transformation into intermetallic phase, the working temperature of the bond formed is several hundred degrees Celsius higher than the process temperature (around 250°C). This process leads to a homologous temperature T/Tm of about 0.3 compared to 0.7 in the case of soft SnAg solder alloy. Therefore a better reliability of the proposed bonding process is achievable. Results of the match of the predicted volume fraction of the intermetallic forms and the experimentally measured contact volume would be also discussed, for contacts formed in power diodes.

This work refers to the main electro-optical characteristics exhibited by large area indium tin oxide films (300 × 400 mm) produced by r.f. magnetron sputtering under different oxygen concentrations and deposition pressures. Besides that, the ageing effect on the electro-optical characteristics of the films produced was also analyzed. The results achieved show that the film transparency and conductivity were highly improved (more than four orders of magnitude) by first annealing them in air at 470°C, followed by a reannealed stage under vacuum, in a hydrogen atmosphere, at 350°C. The ageing tests show that film degradation occurs when the films are produced at oxygen concentrations above 10% and/or at deposition pressures above 1.2 × 10-2 mbar. © 1999 Elsevier Science S.A. All rights reserved.

This work reports on the performances of undoped and doped amorphous/nanocrystalline silicon films grown by hot wire plasma assisted technique. The structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), composition (oxygen and hydrogen content) and transport properties of the films are highly dependent on the temperature of the filament and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4mWcm-2) and filament temperatures around 1850 K present dark conductivities below 10-10 Scm-1, optical gaps of about 1.6 eV and photosensitivities above 105, (under AM 1.5 light intensities), with almost no traces of oxygen content. For the n- and the p-doped silicon films also fabricated under the same conditions the conductivities obtained are of about 10-2Scm-1 and 10-5Scm-1, respectively. © 1998 Elsevier Science Ltd. All rights reserved.

This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4 mWcm-2) and with filament temperatures around 1850 °K have dark conductivities below 10-10 Scm-1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM1.5), with almost no traces of oxygen content. N-doped silicon films were also fabricated under the same conditions which attained conductivities of about 10-2 Scm-1.

The effect of doping and annealing atmosphere on the performances of zinc oxide thin films prepared by spray pyrolysis have been studied. The results show that the way doping influences the electrical and structural properties depends also on the characteristics of the doping element. Annealing the as-deposited films in an inert atmosphere leads to a substantial reduction in the resistivity of the films deposited and to an increase on the degree of film's crystallinity. © 1999 Elsevier Science S.A. All rights reserved.

An air-stable formate dehydrogenase (FDH), an enzyme that catalyzes the oxidation of formate to carbon dioxide, was purified from the sulfate reducing organism Desulfovibrio gigas (D. gigas) NCIB 9332. D. gigas FDH is a heterodimeric protein [alpha (92 kDa) and beta (29 kDa) subunits] and contains 7 +/- 1 Fe/protein and 0.9 +/- 0.1 W/protein, Selenium was not detected. The UV/visible absorption spectrum of D, gigas FDH is typical of an iron-sulfur protein. Analysis of pterin nucleotides yielded a content of 1.3 +/- 0.1 guanine monophosphate/mol of enzyme, which suggests a tungsten coordination with two molybdopterin guanine dinucleotide cofactors. Both Mossbauer spectroscopy performed on D. gigas FDH grown in a medium enriched with Fe-57 and EPR studies performed in the native and fully reduced state of the protein confirmed the presence of two [4Fe-4S] clusters. Variable-temperature EPR studies showed the presence of two signals compatible with an atom in a d(1) configuration albeit with an unusual relaxation behavior as compared to the one generally observed for W(V) ions.

The soluble methane monooxygenase system from Methylococcus capsulatus (Bath) catalyzes the oxidation of methane to methanol and water utilizing dioxygen at a non-heme, carboxylate-bridged diiron center housed in the hydroxylase (H) component. To probe the nature of the reductive activation of dioxygen in this system, reactions of an analogous molecule, nitric oxide, with the diiron(II) form of the enzyme (H-red) Were investigated by both continuous and discontinuous kinetics methodologies using optical, EPR, and Mossbauer spectroscopy. Reaction of NO with H-red affords a dinitrosyl species, designated H-dinitrosyl, with optical spectra (lambda(max) = 450 and 620 nm) and Mossbauer parameters (delta = 0.72 mm/s, Delta E-Q = 1.55 mm/s) similar to those of synthetic dinitrosyl analogues and of the dinitrosyl adduct of the reduced ribonucleotide reductase R2 (RNR-R2) protein. The H-dinitrosyl species models features of the H-peroxo intermediate formed in the analogous dioxygen reaction. In the presence of protein B, H-dinitrosyl builds up with approximately the same rate constant as H-peroxo (similar to 26 s(-1)) at 4 degrees C. In the absence of protein B, the kinetics of H-dinitrosyl formation were best fit with a biphasic A –> B –> C model, indicating the presence of an intermediate species between H-red and H-dinitrosyl. This result contrasts with the reaction of H-red with dioxygen, in which the H-peroxo intermediate forms in measurable quantities only in the presence of protein B. These findings suggest that protein B may alter the positioning but not the availability of coordination sites on iron for exogenous ligand binding and reactivity.