N-type silicon films produced by hot wire technique

N-type silicon films produced by hot wire technique

Citation:: Ferreira, I.M.M., Cabrita Fortunato Martins A. M. F. E. "N-type silicon films produced by hot wire technique." Materials Research Society Symposium - Proceedings. Vol. 609. 2000. A651-A656.

Abstract:

The role of the deposition pressure (p) and the type of filaments (tungsten, W or tantalum, Ta) used to produce large area (10cm×10cm) n-type Si:H films by hot wire chemical vapour (HW-CVD) deposition technique was investigated. The data show that the electro-optical properties of the films produced are dependent on the gas pressure used. In the pressure range of 1×10-3 Torr to 1.0 Torr, the room dark conductivity (σd) varies from 1×10-8 to 2 S/cm for films produced at the same hydrogen dilution and filament temperature (Tfil). On the other hand, the hydrogen concentration (CH) decreases from 10% to 2%, while the growth rate (R) shows an exponential increase, from 1 to 9 Å/s. The SIMS analysis, within the detection limits, does not reveal the existence of any significant W or Ta contamination in the films produced.

Notes:

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Rodrigo Martins

Professor @ Materials Science Department