This work analyse mainly the dissociation mechanism of the gas during the hot wire (HW) and hot wire plasma-assisted (HWPA) processes used to produce hydrogenated carbon films and silicon-carbide, using ethylene and silane as gas sources. The results show that ethylene is better decomposed by plasma-enhanced chemical vapour deposition (PECVD) than HW process. The data also show that the HWPA leads to a better carbon © incorporation than HW processes, when silicon carbide alloys are produced and, that the presence of atomic hydrogen (H) is beneficial for all processes. That is, the presence of the plasma and H lead to the formation of higher C radicals such as methylsilane (CH3SiH3), ethylsilane (C2H5SiH3) and silorane (C2H4SiH2), whose contributions are enhanced as the fraction of ethylene (Feth) in the gas mixture increases. © 2001 Published by Elsevier Science B.V.

The periplasmic hydrogenase of Desulfovibrio vulgaris (Hildenbourough) is an all Fe-containing hydrogenase. It contains two ferredoxin type [4Fe-4S] clusters, termed the F clusters, and a catalytic H cluster. Recent X-ray crystallographic studies on two Fe hydrogenases revealed that the H cluster is composed of two sub-clusters, a [4Fe-4S] cluster ([4Fe-4S]H) and-a binuclear Fe cluster ([2Fe]H), bridged by a cysteine sulfur. The aerobically purified D. vulgaris hydrogenase is stable in air. It is inactive and requires reductive activation. Upon reduction, the enzyme becomes sensitive to O(2) indicating that the reductive activation process is irreversible. Previous EPR investigations showed that upon reoxidation (under argon) the H cluster exhibits a rhombic EPR signal that is not seen in the as-purified enzyme, suggesting a conformational change in association with the reductive activation. For the purpose of gaining more information on the electronic properties of this unique H cluster and to understand further the reductive activation process, variable-temperature and variable-field Mossbauer spectroscopy has been used to characterize the Fe-S clusters in D. vulgaris hydrogenase poised at different redox states generated during a reductive titration, and in the GO-reacted enzyme. The data were successfully decomposed into spectral components corresponding to the F and H clusters,and characteristic parameters describing the electronic and magnetic properties of the F and H clusters were obtained. Consistent with the X-ray crystallographic results, the spectra of the H cluster can be understood as originating from an exchange coupled [4Fe-4S] - [2Fe] system. In particular, detailed analysis of the data reveals that the reductive activation begins with reduction of the [4Fe-4S]H cluster from the 2+ to the If state, followed by transfer of the reducing equivalent from the [4Fe-4S]H subcluster to the binuclear [2Fe]H subcluster. The results also reveal that binding of exogenous CO to the H cluster affects significantly the exchange coupling between the [4Fe-4S]H and the [2Fe]H subclusters. Implication of such a CO binding effect is discussed.

We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics. © 2001 Elsevier Science B.V. All rights reserved.

This paper presents the process conditions that lead to the production of nanostructured silicon films grown by plasma enhanced chemical vapour deposition close to the so-called gamma regime (powder formation), highly dense and with low density of bulk states. Thus, the powder management is one important issue to be addressed in this paper. As a general rule we observed that high quality films (low density of states and high μτ products) are obtained when films are grown under low ion bombardment at high hydrogen dilution and deposition pressure conditions, to allow the proper surface passivation and surface activation.

In this work we present the results of a study on the uniformity of ZnO thin films produced by spray pyrolysis. The properties of the thin films depend essentially on the carrier gas pressure and gas flow used. The best films for optoelectronic applications were obtained with a carrier gas pressure of 2 bar and solution flow of 37 ml/min. The velocity of the nozzle affects essentially the uniformity of the ZnO thin films. However this important characteristic of the large area thin films is independent of the nature (doped and undoped) of the thin film and exhibits a high dependence on the variation of the temperature along the substrate. © 2001 Materials Research Society.

The performances of amorphous and nano-crystalline porous silicon thin films as gas detector are pioneer reported in this work. The films were produced by the hot wire chemical vapour deposition (HW-CVD). These films present a porous like-structure, which is due to the uncompensated bonds and oxidise easily in the presence of air. This behaviour is a problem when the films are used for solar cells or thin film transistors. For as gas detectors, the oxidation is a benefit, since the CO, H2 or O2 molecules replace the OH adsorbed group. In the present study we observe the behaviour of amorphous and nano-crystalline porous silicon thin films under the presence of ethanol, at room temperature. The data obtained reveal a change in the current values recorded by more than three orders of magnitude, depending on the film preparation condition. This current behaviour is due to the adsorption of the OH chemical group by the Si uncompensated bonds as can be observed in the infrared spectra. Besides that, the current response and its recover time are done in few seconds.