Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

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Working teams in enterprise environment are considered as the most advanced forms of work organisation. This means the forms that can improve productivity quality of working life. Nevertheless, it prevails a slow development and dissemination of these advanced organisational forms in European companies. The reason for that lays in a complex linkage factors from social values to the economical pressures. But other factors are also related to the national systems of education training, to the different systems of industrial relations and technology policy.

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In order to correlate the MIS devices performance with different surface oxidation methods, AFM, spectroscopic ellipsometry and infrared spectroscopy measurements were performed in a-Si:H films, before and after surface oxidation, using different oxidation techniques and oxides: thermal dry (in air), wet (in H2O2) and by oxygen plasma, while MIS (metal-insulator-semiconductor) devices were characterized by I-V curves, under dark and AM1.5 illumination conditions. The a-Si:H films were grown by the PECVD technique, in a modified triode configuration reactor to allow a precise control of the ion bombardment during the film deposition. We found that the growth of a thin layer of oxide by chemical processes on the top of the a-Si:H surface can cause changes on the surface morphology that are reflected in the electrical behaviour of the devices. The oxygen plasma treatment, cause the rearrangement of the surface atoms leading to a change of their morphology and to the improvement of the electrical properties of the surface for a MIS applications.

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This paper deals with the determination of plasma impedance and ion density in r.f. plasmas using different mixtures of silane with methane or ethylene and r.f. powers. The aim is to correlate these parameters with carbon and hydrogen contents of the films produced. The data achieved show that the best carbon incorporation is achieved using ethylene gas mixtures, under low gas mixture concentration, where the substrate also sustains a low ion bombardment. The data also show that particulates in the plasma can be more easily formed in the ethylene-based processes. © 2001 Published by Elsevier Science B.V.

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Hall effect measurements have been used to evaluate the conduction mechanism, exhibited by tin oxide thin film gas sensors deposited by spray pyrolysis. Two experiments have been carried out: (i) Hall measurements in air and (ii) in the presence of methane (first results reported), both as a function of temperature. From the measurements performed it was possible to infer the potential barrier and its dependence with the atmosphere used. The results obtained for the carrier concentration and mobility have been analysed in the light of the oxygen diffusion mechanism at grain boundaries by using the grain boundary-trapping model. In the presence of the methane gas the electrical resistivity decreases due to the lowering of the inter-grain boundary barrier height. © 2001 Published by Elsevier Science Ltd.

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In this work we present the results of a study concerning the role of the properties of zinc oxide thin films deposited by spray pyrolysis on its sensitivity to methane or ethane. It was found that using highly resistive thin layers leads to an increase in the film sensitivity. The variation of the operating temperature of the film leads to a significant change in the sensitivity of the sensor and the ideal operating temperature dependence of the gas used. The sensitivity of the ZnO thin films changes linear with the increase of the gas concentration. However these films seem to be more appropriated for the detection of methane than for ethane since the value of sensitivity obtained are higher and its variation with the gas concentration more pronounced. After the annealing treatment performed the films sensitivity decreases.

The influence of doping on the properties of zinc oxide thin films deposited by spray pyrolysis has been studied. The results show that the doping affects the properties of the films, mainly the electrical ones, function of its concentration and nature. The most significative improvement were observed for films doped with 1 at.% of indium exhibiting a resistivity of 1.9 × 10-1 Ω m associated to a transmittance of 86%, characteristics required for applications on the optoelectronic devices. © 2001 Elsevier Science Ltd. All rights reserved.

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This work presents a fast method to determine qualitatively the uniformity and the thickness of transparent or semitransparent thin films in the visible to near-infrared region. The method proposed is based on the information recorded by a colour scanner in the form of coloured regions, due to the constructive interferences caused by multibeam wavelength light sources as function of the film thickness and refractive index. The method is well applied in transparent films, where the uniformity cannot be seen by visual inspection. This paper shows that the results obtained for ZrO2 films are satisfactory enabling the application of this technique to determine the films uniformity in fast and cheap way.

In the recent past, multiple techniques and tools have been proposed and contributed to improve the distributed debugging functionalities, in several distinct aspects, such as handling the non-determinism, allowing cyclic interactive debugging of parallel programs, and providing more user-friendly interfaces. However, most of these tools are tied to a specific programming language and provide rigid graphical user interfaces. So they cannot easily adapt to support distinct abstraction levels or user interfaces. They also don’t provide adequate support for cooperation with other tools in a software engineering environment. In this paper we discuss several dimensions which may contribute to develop more flexible distributed debuggers. We describe Fiddle, a distributed debugging tool which aims at overcoming some of the above limitations.