Cunha, José C., João Louren{\c c}o, and Vitor Duarte. "
The DDBG distributed debugger." Commack, NY, USA: Nova Science Publishers, Inc., 2001. 279-290.
Louren{\c c}o, João, and José C. Cunha. "
Fiddle: A Flexible Distributed Debugging Architecture."
Proceedings of the International Conference on Computational Science-Part II. ICCS ’01. London, UK, UK: Springer-Verlag, 2001. 821-830.
AbstractIn the recent past, multiple techniques and tools have been proposed and contributed to improve the distributed debugging functionalities, in several distinct aspects, such as handling the non-determinism, allowing cyclic interactive debugging of parallel programs, and providing more user-friendly interfaces. However, most of these tools are tied to a specific programming language and provide rigid graphical user interfaces. So they cannot easily adapt to support distinct abstraction levels or user interfaces. They also don’t provide adequate support for cooperation with other tools in a software engineering environment. In this paper we discuss several dimensions which may contribute to develop more flexible distributed debuggers. We describe Fiddle, a distributed debugging tool which aims at overcoming some of the above limitations.
Águas, H., Nunes Fortunato Silva Silva Figueiredo Soares Martins P. E. R. "
Hydrogenated amorphous silicon / ZnO shottky heterojunction for position sensitive detectors."
Materials Research Society Symposium - Proceedings. Vol. 664. 2001. A2661-A2666.
AbstractIn this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/aSi:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ≈ 2% and a good sensitivity to the light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.