In this work we present results concerning the composition and structure of intrinsic thin film silicon carbide alloys obtained by hot wire and hot wire plasma assisted techniques using ethylene as carbon gas source. The data show that by increasing the percentage of ethylene in the gas mixture from 14% to 60% the optical band gap is enhanced from 1.8 eV to 2.3 eV, for films produced by hot wire technique at a filament temperature of 2123K (1850°C). This is attributed to the increase of carbon incorporation, which was confirmed by the infrared spectra data where an increase is observed in the SiC stretching vibration mode ascribed to the peak located at around 750cm-1. On the other hand, the films produced by combining hot wire and rf plasma show a more efficient carbon incorporation. The SEM photographs of samples produced with hot wire technique reveal an amorphous structure, confirmed by micro-Raman spectroscopy data, while the samples produced with plasma assisting the process show a granular structure with grain sizes in the range of 100-200nm. © 2002 Elsevier Science Ltd. All rights reserved.

The influence of residual stresses on the performances of large area position sensitive detectors produced on flexible substrates are presented here. For evaluating the residual stresses, two main techniques were used: An active optical triangulation and angle resolved scattering and the constant photocurrent method (CPM). From the results it was possible to correlate the stresses and the density of defects present in the films.

Low density polyethylene (LDPE) films kept in a sodium chloride aqueous solution, were aged under a high AC electrical field. The films were prepared from press moulding of LDPE pellets with small amounts of antioxidants. The dielectric spectra at 30 degreesC in the range of 10(-5) Hz to 105 Hz were obtained prior and after ageing. Three different experimental techniques were used to obtain the full spectrum. For the low frequency (LF) region (10(-5) Hz to 10(-1) Hz) the time domain technique was used (charge and discharge currents were also measured). The measuring device used for the 10(-1) Hz to 10(1) Hz medium frequency (MF) region was a lock-in amplifier. While for the high frequency (HF), 10(-1) Hz to 10(5) Hz, RLC bridge measurements were performed. Differences can be seen between aged and unaged PE. The region showing less changes with ageing is the MF region where the peak of the unaged samples seems to become less defined with ageing time. This peak is probably due to additives and impurities (such as antioxidants) that will tend to slowly diffuse out with time. The LF peak is a broad peak related to localised space charge injection driven by the electric field. This peak increases in an earlier stage of ageing decreasing afterwards possibly when the polymer becomes more conductive. Finally the HF shows the beginning of a peak due to gamma and beta transitions. The later is related to dipolar rotation of carbonyl groups in amorphous polymer regions, while the former is associated to crankshaft motions in the main polymer chain. This peak decreases with ageing disappearing for the most aged samples. This could also be explained if the sample becomes more conductive.

Low density polyethylene (LDPE) films kept in a sodium chloride aqueous solution, were aged under a high AC electrical field. The films were prepared from press moulding of LDPE pellets with small amounts of antioxidants. The dielectric spectra at 30 degreesC in the range of 10(-5) Hz to 105 Hz were obtained prior and after ageing. Three different experimental techniques were used to obtain the full spectrum. For the low frequency (LF) region (10(-5) Hz to 10(-1) Hz) the time domain technique was used (charge and discharge currents were also measured). The measuring device used for the 10(-1) Hz to 10(1) Hz medium frequency (MF) region was a lock-in amplifier. While for the high frequency (HF), 10(-1) Hz to 10(5) Hz, RLC bridge measurements were performed. Differences can be seen between aged and unaged PE. The region showing less changes with ageing is the MF region where the peak of the unaged samples seems to become less defined with ageing time. This peak is probably due to additives and impurities (such as antioxidants) that will tend to slowly diffuse out with time. The LF peak is a broad peak related to localised space charge injection driven by the electric field. This peak increases in an earlier stage of ageing decreasing afterwards possibly when the polymer becomes more conductive. Finally the HF shows the beginning of a peak due to gamma and beta transitions. The later is related to dipolar rotation of carbonyl groups in amorphous polymer regions, while the former is associated to crankshaft motions in the main polymer chain. This peak decreases with ageing disappearing for the most aged samples. This could also be explained if the sample becomes more conductive.

In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1at% of indium which exhibit a resistivity of 1.9 × 10-1 Ωcm associated with a transmitance of 90%. After the annealing treatment, the resistivity of the film decreases to 5.9 × 10-3 Ωcm without significative changes in the optical properties. The films were also used to produce amorphous silicon solar cells where the best results were obtained for ZnO:In. © 2002 Elsevier Science Ltd. All rights reserved.

Where a-Si:H pin devices are concerned, one of the main obstacles regarding improved performance is device stability, usually attributed to adverse behaviour at various interfaces within the device. Several attempts have been made to overcome this problem, such as the use of blocking layers at the interfaces. Although these have led to some improvements in device performance, most of the problems associated with device stability remain. This is mainly due to the defects at the interfaces, since the blocking layers (silicon alloys with carbon, nitrogen or oxygen) usually have a high density of bulk states, in comparison to intrinsic a-Si:H films. In this paper, we present a method that seems to be capable of improving device stability. It consists of performing a controlled removal of oxide interlayers at the interfaces, by an appropriate etching process. This enables the production of highly smoothed interfaces, and reduces possible cross-contamination of the i-layer from the adjacent doped layers. This amounts to a new design of typical pin devices, in which thin absorber layers are placed at the p/i and i/n interfaces. Their purpose is to trap most of the impurity atoms diffused from the doped layers, after which they are removed by appropriate etching. The fabrication of the absorbers (sacrificial layers), the nature of the etching and the tailoring of the defect profile at the interfaces will be discussed, including the performance exhibited by the resulting devices. © 2002 Elsevier Science B.V. All rights reserved.