Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz

Citation:
Aguas, H., V. Silva, E. Fortunato, S. Lebib, P. Roca i Cabarrocas, I. Ferreira, L. Guimaraes, and R. Martins. "Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz." Japanese journal of applied physics. 42 (2003): 4935.

Abstract:

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Notes:

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