New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering
- Citation:
- Assunção, V., Fortunato Marques Gonçalves Ferreira Águas Martins E. A. A. "New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering." Thin Solid Films. 442 (2003): 102-106.
Abstract:
Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 × 10-4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average. © 2003 Elsevier B.V. All rights reserved.
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