Large Area Deposition of Polymorphous Silicon by Plasma Enhanced Chemical Vapor Deposition at 27.12 MHz and 13.56 MHz
- Citation:
- i Águas, H.a, Silva Fortunato Lebib Roca Cabarrocas Ferreira Guimarães Martins V. a E. a. "Large Area Deposition of Polymorphous Silicon by Plasma Enhanced Chemical Vapor Deposition at 27.12 MHz and 13.56 MHz." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42 (2003): 4935-4942.
Abstract:
This work presents for the first time a study on the deposition of polymorphous silicon at an excitation frequency of 27.12 MHz in a large-area plasma enhanced chemical vapor deposition (PECVD) reactor. Moreover, the films produced at 13.56 MHz were also investigated to compare their performance with that of the films produced at 27.12 MHz. The SiH4/H2 plasma was characterized by impedance probe measurements, aiming to identify the plasma conditions that lead to produce polymorphous films, under quasi-isothermal conditions. The films were characterized by spectroscopic ellipsometry, infrared absorption, Raman spectroscopy, and hydrogen exodiffusion experiments. These techniques enable a detailed structural characterization of the polymorphous films and a study of the differences between the films deposited at 27.12 MHz and 13.56 MHz. Conductivity measurements were also performed to determine the transport properties of the films. The results show that by using a 27.12 MHz frequency, the growth rate increased by 70% and a more stable, relaxed and denser structure was obtained.
Notes:
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