Despite of a growing interest in this material, until now the studies on polymorphous silicon (pm-Si:H) have been performed on small laboratory reactors working at 13.56 MHz. Envisaging an industrial application of pm-Si:H, the technology was transferred to a large area plasma enhanced chemical vapour deposition reactor (25 × 40 cm2) working at excitation frequencies of 13.56 and 27.12 MHz. The plasma was characterized by impedance probe measurements and the films were characterized by spectroscopic ellipsometry, infrared spectroscopy and hydrogen evolution experiments, which are techniques that allow a rapid and reliable identification of pm-Si:H structure. Conductivity measurements were also performed to determine their transport properties. The results show that scaling up using the 13.56 MHz was successfully done and pm-Si:H films were deposited at a growth rate of ≈ 12 nm/min. Moreover, by using the 27.12 MHz excitation frequency the growth rate was even further increased to above 18 nm/min, as desired for industrial production. © 2002 Elsevier Science B.V. All rights reserved.

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This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nm s-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

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This work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.

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The aim of the TeleRisk Project on labour relations and professional risks within the context of teleworking in Portugal – supported by IDICT – Institute for Development and Inspection of Working Conditions (Ministry of Labour), is to study the practices and forms of teleworking in the manufacturing sectors in Portugal. The project chose also the software industry as a reference sector, even though it does not intend to exclude from the study any other sector of activity or the so-called “hybrid” forms of work. However, the latter must have some of the characteristics of telework. The project thus takes into account the so-called “traditional” sectors of activity, namely textile and machinery and metal engineering (machinery and equipment), not usually associated to this type of work. However, telework could include, in the so-called “traditional” sectors, other variations that are not found in technologically based sectors. One of the evaluation methods for the dynamics associated to telework consisted in carrying out surveys by means of questionnaires, aimed at employers in the sectors analysed. This paper presents some of the results of those surveys. It is important to mention that, being a preliminary analysis, it means that it does not pretend to have exhausted all the issues in the survey, but has meant that it shows the bigger tendencies, in terms of teleworking practices, of the Portuguese industry.

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In this work, spectroscopic ellipsometry was used to characterise oxide films produced by anodic oxidation of amorphous silicon using an ethylene glycol (0.04 M KNO3) solution. The data obtained show that the growth of the oxide is not only a function of the voltage applied, but also of the current density and of the time process. An empiric model based on a power law is proposed for the growth of the oxide using, as parameters, the voltages and the time process. The oxide produced shows porosity of approximately 12%, which can be reduced down to 6% under well-controlled growth conditions. © 2002 Elsevier Science B.V. All rights reserved.

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Monitoring systems have traditionally been developed with rigid objectives and functionalities, and tied to specific languages, libraries and run-time environments. There is a need for more flexible monitoring systems which can be easily adapted to distinct requirements. On-line monitoring has been considered as increasingly important for observation and control of a distributed application. In this paper we discuss monitoring interfaces and architectures which support more extensible monitoring and control services. We describe our work on the development of a distributed monitoring infrastructure, and illustrate how it eases the implementation of a complex distributed debugging architecture. We also discuss several issues concerning support for tool interoperability and illustrate how the cooperation among multiple concurrent tools can ease the task of distributed debugging.

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In this paper, we present the preliminary results concerning the deposition of highly transparent and conductive gallium-doped zinc oxide (GZO) deposited on transparent flexible substrate based on cellulose derivatives. Prior to the deposition of the GZO film, the surface of the polymer have been coated with a thin silicon dioxide (SiO2) layer deposited by thermal evaporation assisted by an electron gun. By doing this surface treatment, we succeeded in depositing highly conductive and transparent GZO with an electrical resistivity of 2.0 × 10-3 Ω cm and an average optical transmittance in the visible part of the spectrum (400-700 nm) of 70% by r.f. magnetron sputtering at room temperature. Besides the optoelectronic properties, the films are mechanically stable with a polycrystalline structure with a strong preferred (002) orientation, parallel to the substrate. © 2003 Elsevier B.V. All rights reserved.

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Ab initio calculations have been performed to study the methyl azidoformate (N3COOCH3) and the ethyl azidoformate (N3COOCH2CH3). Several molecular properties, such as conformational equilibrium, optimal geometry, and vibrational frequencies, have been computed for these molecules. Ionization energies based on Koopman's theorem were also computed.

The thermal decomposition and crystallization behaviour of a sol-gel precursor used for the preparation of c-axis oriented Al-doped ZnO thin films were investigated in the temperature range 20-600°C by TG-DTA, IR spectroscopy and XRD analysis. At low temperature, the formation of ZnO crystallites from the sol precursor, prepared by dissolving Zn(CH 3COO)2·2H2O and AlCl 3·6H2O in 2-methoxyethanol and monoethanol amine, takes place via zinc carbonate hydroxide (sclarite/hydrozincite) and occurs simultaneously with the decomposition of this intermediary compound, which occurs above 150°C. At 200°C, the crystalline structure is well defined in terms of ZnO hexagonal lattice parameters, although an important amount of residual organic compounds and water was not yet removed. Increasing the treatment temperature up to 300, 400 and 600°C leads to a gradual removal of the residual organic compounds and therefore to a small change of the ZnO crystalline structure in terms of lattice parameters and grain size.