We present here a two-dimensional numerical simulation of a hydrogenated amorphous silicon p-i-n solar cell non-uniformly illuminated through the p-layer. This simulation is used to show the effect of the presence of dark regions in the illuminated surface on the electrical behaviour of the device. The continuity equations for holes and electrons together with Poisson's equation, implemented with a recombination mechanism reflecting the amorphous structure of the material, are solved using standard numerical techniques over a rectangular domain. The results obtained reveal the appearance of a lateral component of the electric field and current density vectors inside the structure. The effect of such components is a lateral carrier flow of electrons inside the intrinsic layer and of holes inside the p-layer, resulting in leakage of the transverse current collected at the contacts and an increase in the series resistance.

This paper analyses the problems and trends of the introduction of anthropocentric production systems (APS) in small less industrialized member states of the European Union, specifically the case of Portugal, based on the report for the FAST-Anthropocentric Technology Assessment Project (Monitor Programme) on “Prospects and conditions for APS in Europe by the 21st century”. Research teams from all countries of the European Community, as well as researchers from USA, Japan and Australia were participating in this project. The aim of this paper is to characterize APS and to present some special considerations related to the socioeconomic factors affecting the prospects and conditions for APS in Portugal. APS is defined as a system based on the utilization of skilled human resources and flexible technology adapted to the needs of flexible and participative organization. Among socioeconomic factors, some critical aspects for the development of APS will be focused, namely technological infrastructure, management strategies, perceived impact of introduction of automated systems on the division of labor and organizational structure, educational and vocational training and social actors strategies towards industrial automation. This analysis is based on a sample of industrial firms, built up for qualitative analysis, and on case studies analysis that can be reference examples for further development of APS, and not just for economic policy purposes alone. We have also analyzed the type of existing industrial relations, the union and employer strategies and some aspects of public policies towards the introduction of new technologies in the order to understand the extent to which there exist obstacles to and favorable conditions for the diffusion of anthropocentric systems. Finally some recommendations are presented to stress the trends for the implementation and development of anthropocentric production systems in Portugal.

The application of hydrogenated amorphous silicon (a-Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a-Si:H based devices, single and dual axis large area (up to 80×80 mm 2) thin film position sensitive detectors (TFPSD) based on a-Si:H p-i-n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported. © 1994 American Institute of Physics.

This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.

In the last two decades (70 and 80) there took place an intensive controversy in the field of Industrial and Work Sociology. There the topic of the study object of this scientific discipline is again discussed. This controversy, however, has a relatively different sense in comparison with the one that existed in early 60ies. The more recent one followed the increasing number of possibilities of electronical equipment for data processing at the same time its price is decreasing. In this article we try to give knowledge of the main elements that take part in such debate. It is also important to present the international character of the research developed in association with this discussion. It evolves a plurality of research teams that present, compare and synthesize the results of empirical studies that are applied for a wide variety of countries.

This paper deals with a new model and structure able to tailor defects in pin devices. The model assumes the usual density of states profile, including donor and acceptor like states inside the mobility gap and has the capability to simulate the transient and steady state device behavior. The new structure is based in two interfacial defectous layers, located at the junctions, acting as "gettering" centers to tailor the defects. The role of the interlayer and its thickness on device performances will be also discussed. © 1993.

The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics. © 1991.

N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels. © 1989.

In this paper we report by the first time tunneling tranport on vertical μcSi/aSixCyOz:H/μcSi (μcaμc) heterostructures produced in a Two consecutive Decomposition and Deposition Chamber system where a Negative Differential Conductance is observed even at room temperature. Giant bias anomalies are observed, that decrease with temperature. Tunneling spectroscopy data are also reported for samples measured at low temperatures. A qualitative information of the recorded data is obtained and related with main features of the heterostructure. Nevertheless in this stage is hard to take quantitative information. © 1989.