A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface
- Citation:
- de Nijs, J.M.M.a, Carvalho Santos Martins C. b M. b. "A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface." Applied Surface Science. 52 (1991): 339-342.
Abstract:
The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics. © 1991.
Notes:
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