In this paper we address the problem of uncertainty in the design and planning of a multi-period, multi-product closed loop supply chain, where the recovered products are end-of-life products that are disassembled and recycled. Uncertainty is explicitly modelled by considering customers’ demands and returns to be stochastic. A two–stage model is developed where first stage decisions concern the facility location while second stage decisions are the production planning of the supply chain. The integer L- shaped method was adopted as the solution tool and computational tests were performed on multi-period and multi-commodity networks randomly generated based on a reference case. A comparison between the proposed solution method and the straight use of the CPLEX is performed.

The C 1s and N 1s photoelectron spectra of gas-phase 5-aminotetrazole (5ATZ) were recorded using synchrotron radiation, with the aim of evaluating 1H/2H tautomer population ratios. The core-electron binding energies (CEBEs) were estimated from computational results, using the delta self-consistent-field (ΔSCF) approach. Simulated spectra were generated using these CEBEs and the results from Gaussian-n (Gn, n=1, 2 and 3) and Complete Basis Set (CBS-4M and CBS-Q) methods. Results reveal the almost exclusive predominance of the 2H-tautomer, with a 1H/2H ratio of ca. 0.12/0.88, taken from a gross analysis of the XPS C 1s spectrum, recorded at 365 K.

Samples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Samples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Building energy management may simultaneously integrate multiple energy areas and sources of information. The coordination of synergies allow better-informed decisions, such as performing forecasts and adjustments of energy production and storage, while adapting electrical loads to off-peak times, when energy rates are lower. This work targets the improvement and optimization of energy management operations in buildings and large complexes, by introducing a conceptual model for supporting real-time advanced reasoning and inference towards efficient energy management.

Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) - structure, physics and brief history Paper electronics - Paper transistors, paper memories and paper batteries Applications of oxide TFTs - transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors. © 2012 John Wiley & Sons, Ltd.

Chemical Physics Letters, 516 (2011) 149-153. doi:10.1016/j.cplett.2011.10.001

This review focuses on the novel CuZ center of nitrous oxide reductase, an important enzyme owing to the environmental significance of the reaction it catalyzes, reduction of nitrous oxide, and the unusual nature of its catalytic center, named CuZ. The structure of the CuZ center, the unique tetranuclear copper center found in this enzyme, opened a novel area of research in metallobiochemistry. In the last decade, there has been progress in defining the structure of the CuZ center, characterizing the mechanism of nitrous oxide reduction, and identifying intermediates of this reaction. In addition, the determination of the structure of the CuZ center allowed a structural interpretation of the spectroscopic data, which was supported by theoretical calculations. The current knowledge of the structure, function, and spectroscopic characterization of the CuZ center is described here. We would like to stress that although many questions have been answered, the CuZ center remains a scientific challenge, with many hypotheses still being formed.

The effect of different mild post-annealing treatments in air, at 270 degrees C, for 4-6 min, on the optical, electrical, structural and chemical properties of copper sulphide (CuxS) thin films deposited at room temperature are investigated. CuxS films, 70nm thick, are deposited on glass substrates by vacuum thermal evaporation from a Cu2S:S (50:50 wt.%) sulphur rich powder mixture. The as-deposited highly conductive crystalline CuS (covellite) films show high carrier concentration (similar to 10(22) cm(-3)), low electrical resistivity (similar to 10(-4) Omega cm) and inconclusive p-type conduction. After the mild post-annealing, these films display increasing values of resistivity (similar to 10(-3) to similar to 10(-2) Omega cm) with annealing time and exhibit conclusive p-type conduction. An increase of copper content in CuxS phases towards the semiconductive Cu2S (chalcocite) compound with annealing time is reported, due to re-evaporation of sulphur from the films. However, the latter stoichiometry was not obtained, which indicates the presence of vacancies in the Cu lattice. In the most resistive films a Cu2O phase is also observed, diminishing the amount of available copper to combine with sulphur, and therefore the highest values of optical transmittance are reached (65%). The appearance on the surface of amorphous sulphates with annealing time increase is also detected as a consequence of sulphur oxidation and replacement of sulphur with oxygen. All annealed films are copper deficient in regards to the stoichiometric Cu2S and exhibit stable p-type conductivity. (C) 2011 Elsevier B.V. All rights reserved.

The effect of different mild post-annealing treatments in air, at 270 degrees C, for 4-6 min, on the optical, electrical, structural and chemical properties of copper sulphide (CuxS) thin films deposited at room temperature are investigated. CuxS films, 70nm thick, are deposited on glass substrates by vacuum thermal evaporation from a Cu2S:S (50:50 wt.%) sulphur rich powder mixture. The as-deposited highly conductive crystalline CuS (covellite) films show high carrier concentration (similar to 10(22) cm(-3)), low electrical resistivity (similar to 10(-4) Omega cm) and inconclusive p-type conduction. After the mild post-annealing, these films display increasing values of resistivity (similar to 10(-3) to similar to 10(-2) Omega cm) with annealing time and exhibit conclusive p-type conduction. An increase of copper content in CuxS phases towards the semiconductive Cu2S (chalcocite) compound with annealing time is reported, due to re-evaporation of sulphur from the films. However, the latter stoichiometry was not obtained, which indicates the presence of vacancies in the Cu lattice. In the most resistive films a Cu2O phase is also observed, diminishing the amount of available copper to combine with sulphur, and therefore the highest values of optical transmittance are reached (65%). The appearance on the surface of amorphous sulphates with annealing time increase is also detected as a consequence of sulphur oxidation and replacement of sulphur with oxygen. All annealed films are copper deficient in regards to the stoichiometric Cu2S and exhibit stable p-type conductivity. (C) 2011 Elsevier B.V. All rights reserved.

n/a

n/a