Tunneling in vertical μcSi/aSixCyOz:H/μcSi heterostructures

Citation:
Fortunato, E., Martins Ferreira Santos Maçarico Guimarães R. I. M. "Tunneling in vertical μcSi/aSixCyOz:H/μcSi heterostructures." Journal of Non-Crystalline Solids. 115 (1989): 120-122.

Abstract:

In this paper we report by the first time tunneling tranport on vertical μcSi/aSixCyOz:H/μcSi (μcaμc) heterostructures produced in a Two consecutive Decomposition and Deposition Chamber system where a Negative Differential Conductance is observed even at room temperature. Giant bias anomalies are observed, that decrease with temperature. Tunneling spectroscopy data are also reported for samples measured at low temperatures. A qualitative information of the recorded data is obtained and related with main features of the heterostructure. Nevertheless in this stage is hard to take quantitative information. © 1989.

Notes:

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