Sensitivity tests to reductive gases such as methane, hydrogen and ethane were performed on zinc oxide (ZnO) thin films. The highest value of sensitivity was obtained for the film with a high electrical resistivity and a low thickness. The variation of the operating temperature of the film leads to a significant change in the sensitivity of the sensor with an ideal operating temperature dependence of the gas used. The sensitivity of the ZnO thin films changes linear with the increase of the gas concentration. However these films seem to be more appropriated for the detection of hydrogen following by methane and than for ethane since the value of sensitivity obtained are higher and its variation with the gas concentration more pronounced.

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited. © 2001 Materials Research Society.

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzke structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low 3.6×10-2 Ωcm have been obtained, as deposited.

The performances of silicon carbide position sensitive detectors in relation to position color selection applications were presented. The devices were deposited on glass substrates coated with a transparent conductive oxide layer based on indium tin oxide film (ITO). On top of the ITP layer a pin structure produced by plasma enhanced chemical vapor deposition technique was deposited. The set of data achieved indicated that the undoped silicon carbide layers presented a low density of states, which explained high dark conductivity values obtained and the type of performances recorded on the PSD devices produced.

In this paper for a public debate promoted by the Portuguese President of Republic in 2000, we start from the basic definitions of information society and discuss the main measures proposed as targets in the firld of work and employment. Structural changes are analysed related with the economical and social dimensions of the information society, especially those related to the work organisation, education and training, and the labour markets. Finally recommendations are made on the topics of innovation, employment and development of information society.

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This paper deals with a new process to improve the stability of a-Si:H pin solar cells deposited in a single batch process by proper passivation of the interfaces. The process consists in removing partially a deposited sacrificial oxide layer grown between the p/i or i/n interfaces by SF6 etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls and the substrate surface. The results achieved in laboratory samples lead to devices in which the fill factor and short circuit current density were improved respectively towards 75% and 16.5 mA cm-2, with a final working efficiency of about 9.5%. © 2001 Elsevier Science Ltd. All rights reserved.

In today's main crystalline silicon (c-Si) applications in MOS (metal-oxide-silicon), MIS (metal-insulator-semiconductor) or SIS (Semiconductor-Insulator-Semiconductor), the growing of the oxide layer plays the main role, dictating the device performances, in particular if it has to be grown by a low temperature process. Of fundamental importance is the SiO2 interface with the c-Si. A very low defect density interface is desirable so that the number of trapping states can be reduced and the devices performance optimised. A two step low temperature oxidation process is proposed. The process consists of growing first a layer of oxide by a wet process and then treating the grown oxide with an oxygen plasma. The oxygen ions from the plasma bombard the oxide causing compaction of the oxide and a decrease in the interface roughness and defect density. Infrared spectroscopy and spectroscopic ellipsometry measurements were performed on the samples to determine the oxide thickness, optical and structural properties. SIS structures were built and capacitance measurements were performed under dark and illuminated conditions from which were inferred the interface defect density and correlated with the oxide growth process.

{We construct surface type measures on the level sets for the renormalized energy, which is an invariant quantity for the two dimensional periodic Euler flow, and prove the existence of weak solutions living on such level sets. Other classes of invariant measures for the motion are also introduced.}

This is the second interim report of the research project "Information Society, Work and the Generation of New Forms of Social Exclusion" (SOWING). It is based on a firm survey conducted in the eight regions participating in the research project — Flanders (Belgium), Lazio (Italy), Niederösterreich (Austria), Portugal, the Republic of Ireland, the Stuttgart area (Germany), the Tampere region (Finland) and the West London area (U.K.). The aim of this report is to present a broad overview of the collected data. In general, only simple statistical methods have been applied. The report focuses on a regional comparison; however, the data have also been analysed by firm size, measured by quantity of staff, and industrial sector. It should be seen as a first step in the data analysis; it may also give some hints for a more strategic analysis of the survey data.

In previous papers the mean excess chemical potential, μ1(E), in ternary systems of the type I sulphate + II sulphate + H2O, at 25°C was determined. Results obtained for systems with CuSO4(I), and ZnSO4(I) respectively, pointed out an obvious disparity between their behaviours. They show the existence of some important association phenomena partially accounting for the substantial deviations from ideal behaviour. The ternary sulphate systems (CuSO4 + Me(I,II)SO4 + H2O; ZnSO4 + Me(I,II)SO4 + H2O) studied were characterized against the binaries of the same ionic strength, experimental data being obtained using both e.m.f. and spectrophotometric methods. Deviations from the ideal behaviour were discussed in terms of thermodynamic excess functions and association constants. A comparative study between the results obtained with the two above mentioned methods is presented. In previous papers the mean excess chemical potential, μ1 E, in ternary systems of the type I sulphate+II sulphate+H2O, at 25 °C was determined. Results obtained for systems with CuSO4(I), and ZnSO4(I) respectively, pointed out an obvious disparity between their behaviours. They show the existence of some important association phenomena partially accounting for the substantial deviations from ideal behaviour. The ternary sulphate systems (CuSO4+MeI, IISO4+H2O; ZnSO4+MeI, IISO4+H2O) studied were characterized against the binaries of the same ionic strength, experimental data being obtained using both e.m.f. and spectrophotometric methods. Deviations from the ideal behaviour were discussed in terms of thermodynamic excess functions and association constants. A comparative study between the results obtained with the two above mentioned methods is presented.

Microcrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a μc-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analyzed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the μc-Si:H intrinsic layer.

Microcrystalline silicon is a two-phase material. Its composition can be interpreted as grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of danglind bonds in the transition regions. In this paper, results obtained by means of numerical simulations about the transport properties of a μc-Si:H p-i-n junction are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken in account, and these regions are treated similarly to a heterojunction interface. The influence of the local electric field at the grains boundary transition regions on the internal electric configuration of the device is outlined under illumination and applied external bias. © 1999 Elsevier Science S.A. All rights reserved.