The aim of this work is to provide the basis for the interpretation, under steady state and in the low-voltage regime of the dark current-density-voltage (J-V) characteristics of transverse asymmetric amorphous silicon (a-Si:H) p-i-n and n-i-p diodes. The transverse asymmetric a-Si:H diodes present ratios between the metal contact and the underneath doped layer areas larger than five, leading to the inclusion, in the diode equation, of a lateral leakage current, responsible for the high saturation current density and the forward shape of the J-V curves recorded. The leakage current depends on the lateral spatial potential developed with which varies following a power-law dependence. The experimental J-V curves in diodes with the doped layer around the metal contact unetched and etched prove the role and origin of this lateral leakage current and, thus, the proposed model. © 1995 American Institute of Physics.

The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD). The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

The aim of this work is to provide the basis for the interpretation, under steady state conditions, of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSD) and the determination of its linear spatial detection limits, function of the device, and light spot source characteristics. This leads to the development of a model, based on the application of the Poisson, continuity, and current density equations in the p-i-n junction, where two thin resistive layers, as equipotentials, are considered on both sides of the doped layers. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlations discussed. © 1995 American Institute of Physics.

A linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time. Taking advantage of the optical properties presented by a-Si:H devices, we have developed a LTFPSD with 128 integrated elements able to be used in 3D inspections/measurements. Each element consists of a one-dimensional LTFPSD, based on a p-i-n diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it will be possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analog detection). © 1995 American Institute of Physics.

A linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3-D inspections/measurements. Each element consists on a one-dimensional LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it is possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).

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The aim of this work is to present experimental data concerning the role of the oxygen partial pressure during the production process on the properties (structure, morphology, composition, and transport properties) exhibited by doped microcrystalline silicon oxycarbide films. The films were produced by a two consecutive decomposition and deposition chamber system, where a spatial separation between the plasma and the growth regions is achieved. The films produced by this technique are highly conductive and highly transparent with suitable properties for optoelectronic applications requiring wide band-gap and low-conductivity materials. © 1995, American Vacuum Society. All rights reserved.

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

The aim of this work is to provide the basis for the interpretation of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSDs) under steady state, through an analytical model. The experimental data recorded in 1D TFPSD devices with different characteristics are compared with the predicted curves and the obtained correlations are discussed. © 1996.

This work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as-deposited film is about 1.3×10-1 Ω* cm and decreases down to 6.9×10-3 Ω* cm as the annealing temperature is increased up to 500°C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 × 10-1 gW*cm and decreases down to 6.9 × 10-3 Ω*cm as the annealing temperature is increased up to 500 °C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping. © 1995.

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A new multitechnique surface analysis system is presented. It has been designed for research on ion-solid interactions and for survey analysis. SIMS, XPS and AES are the main techniques used. Primary sources are an argon source for standard SIMS and a cesium source for negative and cathionized SIMS, a twin anode (Mg and Al) X-ray source for XPS, and a small spot electron gun for AES and low resolution electron microscopy. The mass spectrometer is a modified quadrupole based probe with an energy analyzer, Dynamic and static SIMS are possible as well as depth profiling. Photoelectrons and Auger electrons are analyzed by a true hemispherical energy analyzer that can also be used for ion spectroscopy. A secondary electron detector is also available. Exchanging the samples is possible through a fast entry air lock. In this small chamber a sputter gun is used to clean the sample. The sample under analysis is supported by a XYZ manipulator and can be temperature controlled in the range 130-850 K

The present communication analyses the relationships between work organisation and quality systems. The analysis is based on results from a study funded by the "Specific Programme for the Development of Portuguese Industry" (PEDIP). The main issues which have been currently associated with work organisation and quality control in the Portuguese industry are characterized. Critical features related to the implementation of quality systems and new methods of work organisation for industrial development are also discussed. A few recommendations are given in order to promote appropriate methods of work organisation for quality improvement within Portuguese industry.

In this paper one presents and discuss the hybridation concept using some aspect that integrate it, as the physical architecture of automated systems (hardware), the information system that integrates that architecture and the working places design. Analyzed are also the inter-dependences of those aspects, and we have as a reference the flexible production and assembly system existent at UNINOVA-CRI. The focus is made on possible problems that can occur with the use of possible development of those systems, namely: a) full automation with centralized human control, b) non-automated process of shop-floor work with a system “one man, one machine”, c) hybrid system of automated cells with “elastic” human jobs.

Flavodoxin was isolated and purified from Desulfovibrio desulfuricans ATCC 27774, a sulfatereducing organism that can also utilize nitrate as an alternative electron acceptor. Mid-point oxidation-reduction potentials of this flavodoxin were determined by ultraviolet/visible and EPR methods coupled to potentiometric measurements and their pH dependence studied in detail. The redox potential E(2), for the couple oxidized/semiquinone forms at pH 6.7 and 25 degrees C is -40 mV, while the value for the semiquinone/hydroquinone forms (E(1)), at the same pH, -387 mV. E(2) varies linearly with pH, while E(1) is independent of pH at high values. However, at low pH (<7.0), this value is less negative, compatible with a redox-linked protonation of the flavodoxin hydroquinone. A comparative study is presented for Desulfovibrio salexigens NCIB 8403 flavodoxin {[}Moura, I., Moura, J. J. G., Bruschi, M. and LeGall, J. (1980) Biochim. Biophys. Acta 591, 1-8]. The complete primary amino acid sequence was obtained by automated Edman degradation from peptides obtained by chemical and enzymic procedures. The amino acid sequence was confirmed by FAB/MS. Using the previously determined tridimensional structure of Desulfovibrio vulgaris flavodoxin as a model {[}similarity, 48,6%; Watenpaugh, K. D., Sieker, L. C., Jensen, L. H., LeGall, J. and Dubourdieu M. (1972) Proc. Natl Acad. Sci. USA 69, 3185-3188], the tridimensional structure of D. desulfuricans ATCC 27774 flavodoxin was predicted using AMBER force-field calculations.

This paper is based on a study about the Setúbal region, included in the internacional project “The Future of Industry in Europe” for the programme FAST-MONITOR of the European Community (1992-94). There were some information on the project VW/Ford for this region and those that are connected with research networks on industrial sectors (specially, on the automobile industry), and the network on the spatial and regional factors of regional development. Those studies allowed the scenario development on evolution trends of European industry and, specifically, on the automobile sector, and on the Setúbal region that was studied by the Portuguese team.

In this paper it is analysed the relationships between work organisation and quality systems in firms that uses some forms of advanced automation. Are characterised the existing quality control structures in the Portuguese industry, and the main factors that hidden or fosters the development of sociotechnical methods of quality control organisation strategies. Are analysed some industrial cases that explains more clearly the critical issues of the implementation of quality systems and work organisation systems. A few recommendations are given about the possibilities for the development of new forms of work organisation and the quality systems associated to automated manufacturing systems.

This paper analyses the problems and trends of the introduction of anthropocentric production systems (APS) in small less industrialized member states of the European Union, specifically the case of Portugal, based on the report for the FAST-Anthropocentric Technology Assessment Project (Monitor Programme) on “Prospects and conditions for APS in Europe by the 21st century”. Research teams from all countries of the European Community, as well as researchers from USA, Japan and Australia were participating in this project. The aim of this paper is to characterize APS and to present some special considerations related to the socioeconomic factors affecting the prospects and conditions for APS in Portugal. APS is defined as a system based on the utilization of skilled human resources and flexible technology adapted to the needs of flexible and participative organization. Among socioeconomic factors, some critical aspects for the development of APS will be focused, namely technological infrastructure, management strategies, perceived impact of introduction of automated systems on the division of labor and organizational structure, educational and vocational training and social actors strategies towards industrial automation. This analysis is based on a sample of industrial firms, built up for qualitative analysis, and on case studies analysis that can be reference examples for further development of APS, and not just for economic policy purposes alone. We have also analyzed the type of existing industrial relations, the union and employer strategies and some aspects of public policies towards the introduction of new technologies in the order to understand the extent to which there exist obstacles to and favorable conditions for the diffusion of anthropocentric systems. Finally some recommendations are presented to stress the trends for the implementation and development of anthropocentric production systems in Portugal.

Desulfoferrodoxin, a non-heme iron protein, was purified previously from extracts of Desulfovibrio desulfuricans (ATCC 27774) (Moura, I., Tavares, P., Moura, J. J. G., Ravi, N., Huynh, B. H., Liu, M.-Y., and LeGall, J. (1990) J. Biol. Chem. 265, 21596-21602). The as-isolated protein displays a pink color (pink form) and contains two mononuclear iron sites in different oxidation states: a ferric site (center I) with a distorted tetrahedral sulfur coordination similar to that found in desulforedoxin from Desulfovibrio gigas and a ferrous site (center II) octahedrally coordinated with predominantly nitrogen/oxygen-containing ligands. A new form of desulfoferrodoxin which displays a gray color (gray form) has now been purified. Optical, electron paramagnetic resonance (EPR), and Mössbauer data of the gray desulfoferrodoxin indicate that both iron centers are in the high-spin ferric states. In addition to the EPR signals originating from center I at g = 7.7, 5.7, 4.1, and 1.8, the gray form of desulfoferrodoxin exhibits a signal at g = 4.3 and a shoulder at g = 9.6, indicating a high-spin ferric state with E/D approximately 1/3 for the oxidized center II. Redox titrations of the gray form of the protein monitored by optical spectroscopy indicate midpoint potentials of +4 +/- 10 and +240 +/- 10 mV for centers I and II, respectively. Mössbauer spectra of the gray form of the protein are consistent with the EPR finding that both centers are high-spin ferric and can be analyzed in terms of the EPR-determined spin Hamiltonian parameters. The Mössbauer parameters for both the ferric and ferrous forms of center II are indicative of a mononuclear high spin iron site with octahedral coordination and predominantly nitrogen/oxygen-containing ligands. Resonance Raman studies confirm the structural similarity of center I and the distorted tetrahedral FeS4 center in desulforedoxin and provide evidence for one or two cysteinyl-S ligands for center II. On the basis of the resonance Raman results, the 635 nm absorption band that is responsible for the gray color of the oxidized protein is assigned to a cysteinyl-S–>Fe(III) charge transfer transition localized on center II. The novel properties and possible function of center II are discussed in relation to those of mononuclear iron centers in other enzymes.