Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques
- Citation:
- Martins, R.a, Vieira Ferreira Fortunato Guimarães M. b I. a. "Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques." Solar Energy Materials and Solar Cells. 41-42 (1996): 493-517.
Abstract:
This paper presents results of the role of the oxygen partial pressure used during the deposition process on the transport properties exhibited by doped microcrystalline silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber system, where a spatial separation between the plasma and the growth regions is achieved. This paper also presents the interpretative models of the optoelectronic behaviour observed in these films (highly conductive and transparent with suitable properties for optoelectronic applications) as well as the interpretation of the growth process that leads to film's microcrystallization.
Notes:
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