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The aim of this work is to present a model able to explain the role of the lateral drift current on the experimental behaviour exhibited by p-i-n amorphous silicon solar cells (J-V characteristics, responsivity and the apparent device degradation behaviour), when the ratio between the covered and uncovered metal collected areas of the device is higher than one or recrystallization occurs in the edges of the p-i-n junction.

The aim of this paper is to present data on the dependence of the electro-optical characteristics and structure of n-type microcrystalline silicon films on the r.f. power used during the deposition of films produced by the plasma-enhanced chemical vapour deposition technique. The interest of these films arise from the fact that they combine some electro-optical advantages of amorphous (wide optical gap) and crystalline materials (electronic behaviour), highly interesting in the production of a wide variety of optoelectronic devices such as solar cells and thin film transistors. In this paper, microcrystalline n-type films presenting simultaneously optical gaps of about 2.3 eV, dark conductivity of 6.5 S cm-1 and Hall mobility of about 0.86 cm2 V-1 s-1 will be reported, the highest combined values for n-type microcrystalline silicon films, as far as we know. © 1997 Elsevier Science S.A.