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2004
Fernandes, Vítor H., Gracinda M. S. Gomes, and Manuel M. Jesus. "Presentations for some monoids of injective partial transformations on a finite chain." Southeast Asian Bull. Math.. 28 (2004): 903-918. Abstract

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Semigroups and languages. Eds. Isabel M. Araújo, Mário J. J. Branco, V{\'ı}tor H. Fernandes, and Gracinda M. S. Gomes. Proceedings of the workshop held at the University of Lisbon, Lisboa, November 27–29, 2002. River Edge, NJ: World Scientific Publishing Co. Inc., 2004.
Karlovich, Alexei Yu. "Some algebras of functions with Fourier coefficients in weighted Orlicz sequence spaces." Operator Theoretical Methods and Applications to Mathematical Physics. The Erhard Meister Memorial Volume. Operator Theory: Advances and Applications, 147. Eds. Israel Gohberg, Wolfgang Wendland, António Ferreira dos Santos, Frank-Ollme Speck, and Francisco Sepúlveda Teixeira. Basel: Birkhäuser, 2004. 287-296. Abstract

In this paper, the author proves that the set of all integrable functions whose sequences of negative (resp. nonnegative) Fourier coefficients belong to \(\ell^1\cap\ell^\Phi_{\varphi,w}\) (resp. to \(\ell^1\cap\ell^\Psi_{\psi,\varrho}\)), where \(\ell^\Phi_{\varphi,w}\) and \(\ell^\Psi_{\psi,\varrho}\) are two-weighted Orlicz sequence spaces, forms an algebra under pointwise multiplication whenever the weight sequences
\[
\varphi=\{\varphi_n\},\quad
\psi=\{\psi_n\},\quad
w=\{w_n\},\quad
\varrho=\{\varrho_n\}
\]
increase and satisfy the \(\Delta_2\)-condition.

Bica Oliveira, L., J. R. Fernandes, I. M. Filanovsky, and C. J. M. Verhoeven. "A 2.4 GHz CMOS quadrature LC-oscillator/mixer." Circuits and Systems, 2004. ISCAS'04. Proceedings of the 2004 International Symposium on. Vol. 1. IEEE, 2004. I–165. Abstract
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Musat, V. a, B. b Teixeira, E. b Fortunato, R. C. C. b Monteiro, and P. c Vilarinho. "Al-doped ZnO thin films by sol-gel method." Surface and Coatings Technology. 180-181 (2004): 659-662. AbstractWebsite

Transparent and conductive high preferential c-axis oriented ZnO thin films doped with Al have been prepared by sol-gel method using zinc acetate and aluminium chloride as cations source, 2-methoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip-coating technique at a withdrawal rate of 1.5 cm min-1 on Corning 1737 glass substrate. The effect of dopant concentration, heating treatment and annealing in reducing atmosphere on the microstructure as well as on the electrical and optical properties of the thin films is discussed. The optical transmittance spectra of the films showed a very good transmittance, between 85 and 95%, within the visible wavelength region. The minimum resistivity of 1.3 × 10-3 Ω cm was obtained for the film doped with 2 wt.% Al, preheated at 400 °C and post-heated at 600 °C, after annealing under a reduced atmosphere of forming gas. © 2003 Elsevier B.V. All rights reserved.

Alves, A., I. Henriques, S. Fragoeiro, C. Santos, AJL Phillips, and A. Correia. "Applicability of rep-PCR genomic fingerprinting to molecular discrimination of members of the genera Phaeoacremonium and Phaeomoniella." Plant Pathology. 53 (2004): 629-634. Abstract
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Figueiredo, MO, TP Silva, JP Veiga, AMD Diogo, and L. Trindade. "Archaeology of Lisbon Old City: ceramic crucibles from pre-XVIIIth century metallurgical foundries." Applied Physics a-Materials Science & Processing. 79 (2004): 327-329. Abstract
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Oliveira, L., J. Fernandes, I. Filanovsky, and C. Verhoeven. "ASP-L9. 2: A 2.4 GHZ CMOS QUADRATURE LC-OSCILLATOR/MIXER." IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (2004). Abstract
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Pereira, LuÍs, Isabel Ferreira, Rodrigo Martins, Hugo Águas, Elvira Fortunato, and Leandro Raniero. "Batch Processing Method to Deposit a-Si: H Films by PECVD." Materials Science Forum. 455 (2004): 104-107. Abstract
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Raniero, Leandro, Hugo Águas, Lu{\'ıs Pereira, Elvira Fortunato, Isabel Ferreira, and Rodrigo Martins. "Batch processing method to deposit a-Si: H films by PECVD." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 104-107. Abstract
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Igreja, R., C. J. Dias, R. Martins, E. Fortunato, I. Ferreira, and C. Dias. "Capacitance response of polysiloxane films with interdigital electrodes to volatile organic compounds." Advanced Materials Forum Ii. Vol. 455-456. 2004. 420-424. Abstract
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Igreja, R., and C. J. Dias. "Capacitance response of polysiloxane films with interdigital electrodes to volatile organic compounds." Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 420-424. Abstract
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Igreja, R., C. J. Dias, R. Martins, E. Fortunato, I. Ferreira, and C. Dias. "Capacitance response of polysiloxane films with interdigital electrodes to volatile organic compounds." Advanced Materials Forum Ii. Vol. 455-456. 2004. 420-424. Abstract
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "Characterization of silicon carbide thin films prepared by VHF-PECVD technology." Journal of non-crystalline solids. 338 (2004): 530-533. Abstract
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Aguas, and R. Martins. "Characterization of silicon carbide thin films prepared by VHF-PECVD technology." Journal of non-crystalline solids. 338 (2004): 530-533. Abstract
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Raniero, L., L. Pereira, Shibin Zhang, I. Ferreira, H. Águas, E. Fortunato, and R. Martins. "Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques." Journal of non-crystalline solids. 338 (2004): 206-210. Abstract
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Raniero, L., L. Pereira, Shibin Zhang, I. Ferreira, H. Águas, E. Fortunato, and R. Martins. "Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques." Journal of non-crystalline solids. 338 (2004): 206-210. Abstract
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Ferreira, Isabel, Rodrigo Martins, Pere Roca i Cabarrocas, Hugo Águas, Elvira Fortunato, and Leandro Raniero. "Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz." Materials Science Forum. 455 (2004): 100-103. Abstract
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Martins, Rodrigo, Hugo Águas, Isabel Ferreira, Elvira Fortunato, Leandro Raniero, and Pere Roca i Cabarrocas. "Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 100-103. Abstract
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Martins, R., D. Costa, H. Águas, F. Soares, A. Marques, I. Ferreira, P. Borges, and E. Fortunato. "Detection Limits of a nip a-Si: H Linear Array Position Sensitive Detector." MRS Proceedings. 808.1 (2004). Abstract
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Martins, R., D. Costa, H. Águas, F. Soares, A. Marques, I. Ferreira, P. Borges, and E. Fortunato. "Detection Limits of a nip a-Si: H Linear Array Position Sensitive Detector." MRS Proceedings. Vol. 808. Cambridge University Press, 2004. A4-45. Abstract
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Lanca, M. C., and J. Marat-Mendes. "Dielectric breakdown statistics of polyethylene for progressively-censored data." Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 602-605. Abstract

The dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.

Lanca, M. C., and J. Marat-Mendes. "Dielectric breakdown statistics of polyethylene for progressively-censored data." Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 602-605. Abstract

The dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.

Lanca, M. C., J. Marat-Mendes, R. Martins, E. Fortunato, I. Ferreira, and C. Dias. "Dielectric breakdown statistics of polyethylene for progressively-censored data." Advanced Materials Forum Ii. Vol. 455-456. 2004. 602-605. Abstract
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Fernandes, M.a, Vieira Martins M. a R. b. "Dynamic characterization of large area image sensing structures based on a-SiC:H." Materials Science Forum. 455-456 (2004): 86-90. AbstractWebsite

The working principle of silicon p-i-n structures with low conductivity (σd) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σd doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.