Alexieva, V., I. Sergiev, K. Markova-Petrova, I. Devedjiev, and E. Karanov. "
Herbicidal activity of some novel phosphoamides."
Comptes rendus de l’Academie bulgare des Sciences/ Dokladi na B"lgarskata Akademiya na Naukite. 54.1 (2001): 75-80. http://www.proceedings.bas.bg/.
Camarinha-Matos, Luis M., Hamideh Afsarmanesh, Ersin Cem Kaletas, and Tiago Cardoso. "
Service federation in virtual organizations."
Digital Enterprise Challenges. Springer, Boston, MA, 2001. 305-324.
AbstractThe practical implantation of the concept of dynamic virtual enterprise is still far from expectations due to a number of factors such as the lack of appropriate interoperable infrastructures and tools, lack of common ontology, and the socio-organizational difficulties. However, the creation of industry clusters supported by advanced information and communication tools can meanwhile provide a basis for the rapid creation of dynamic virtual enterprises in response to the market opportunities. A federated service management approach is introduced in this context and its application to the tourism industry is discussed. Finally, the support for the aggregation of simpler services into value-added services, implemented by distributed business processes within different organizations, is presented.
Águas, H., Nunes Fortunato Silva Silva Figueiredo Soares Martins P. E. R. "
Hydrogenated amorphous silicon / ZnO shottky heterojunction for position sensitive detectors."
Materials Research Society Symposium - Proceedings. Vol. 664. 2001. A2661-A2666.
AbstractIn this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/aSi:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ≈ 2% and a good sensitivity to the light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.