In practice one has often to deal with the problem of inconsistency between constraints, as the result, among others, of the comple\-xi\-ty of real models. To overcome these conflicts we can outline two major \mbox{actions}: removal of constraints or changes in the coefficients of the model. This last approach, that can be generically described as ``model corre\-ction" is the problem we address in this paper. The correction of the right hand side alone was one of the first approaches. The correction of both the matrix of coefficients and the right hand side introduces non linearity in the constraints. The degree of difficulty in solving the problem of the optimal correction depends on the objective function, whose purpose is to measure the closeness between the original and corrected model. Contrary to other norms, the optimization of the important Frobenius was still an open problem. We have analyzed the problem using the KKT conditions and derived necessary and sufficient conditions which enabled us to unequivocally characterize local optima, in terms of the solution of the Total Least Squares and the set of active constraints. These conditions justify a set of pruning rules, which proved, in preliminary experimental results, quite successful in a tree search procedure for determining the global minimizer.

In this work, we study the influence of the hydrogenated amorphous silicon (a-Si:H) surface treatment on the J-V characteristics of a-Si:H/Pd Schottky barrier photodiodes. The a-Si:H surface were etched, thermally oxidised and wet oxidised by H2O2. The a-Si:H films were characterised by spectroscopic ellipsometry, were we found that all the oxidation techniques promote an increase of the surface oxide thickness that was confirmed by the increase of the barrier height. The highest barrier was achieved by the H2O2 oxidation where a value of 1.17 eV was found. As a result of the barrier height increase, the dark reverse current density decreases up to 10-10 A/cm2 and the signal to noise ratio increases up to 106. The open circuit voltage under AM1.5 illumination conditions also increases from 0.4 to 0.5 V. These results reveal the importance of the a-Si:H surface preparation prior to metallization to improve the Schottky photodiodes properties. © 2002 Elsevier Science B.V. All rights reserved.

In this work we present the current/voltage characteristics of Si:H/Pd Schottky structures using high quality, low defect density amorphous silicon (a-Si:H) deposited by a non-conventional, modified triode PECVD method. This new configuration allows the deposition of compact and high quality a-Si:H with a photosensitivity of 107, yielding films with low bulk defects. AFM measurements also revealed that these films have a very smooth surface allowing a low defect interface between the metal and the a-Si:H. As a result, we show that by using these a-Si:H films and by proper control of the i-layer thickness the reverse dark current of the diode can be highly reduced achieving signal to noise ratio of 106, surpassing the results usually achieved by p-i-n structures.

The new compound [Co(eta(5)-C5H5)(dppf-P,P')I]I, 1, was synthesised by the stoichiometric reaction of the Co(III) complex [Co(eta(5)-C5H5)(CO)I-2], 2, with 1,1'-bis(diphenylphosphino)ferrocene (dppf) in CH2Cl2, and was characterised by multinuclear NMR spectroscopy. Exposure to air of THF or CH2Cl2 solutions of compound 1 gave, in an unexpected way, a polymeric chain comprising bridging 1,1'-bis(oxodiphenylphosphoranyl) ferrocene (dppfO(2)) joining tetrahedral Co(II) units [CoI2(mu-dppfO(2))](n), 3. Attempts to obtain the polymeric chain 3 by the direct reaction of dppfO(2) with CoI2, in CH2Cl2, gave instead the monomeric compound [CoI2(dppfO(2))], 4, in which dppfO2 is coordinated in a chelating mode. The structural characterisation of compounds 2, 3, and 4 was carried out by single crystal X-ray diffraction studies. The magnetic behaviour of [CoI2(dppfO(2))] and [CoI2(mu-dppfO(2))](n) was studied, and the results are consistent with tetrahedral S = 3/2 Co-II, possessing a (4)A(2) ground state, and S = 0 Fe-II. In these compounds, Co-II negative zero field splittings were determined from an analysis of the magnetic susceptibility temperature dependence, with D/k = -13 and -14 K for CoI2(dppfO(2)) and [CoI2(mu-dppfO(2))](n), respectively. DFT calculations were performed in order to understand the electronic structure of [Co(eta(5)-C5H5)(dppf-P,P')I]I, 1, as well as that of the paramagnetic specie [CoI2(dppfO(2))], 4. The [CoI2(mu-dppfO(2))](n) chain was also analysed and found to behave very similarly to the monomeric iodine derivative 4. The calculations showed the unpaired electrons to be localized on the Co(II) centre in all these species. The rather complicated electrochemical behaviour exhibited by the dppf complex [Co-III(eta(5)-C5H5)(dppf-P,P')I]I and by [Co(dppfO(2))I-2] is discussed.