Hydrogenated amorphous silicon / ZnO shottky heterojunction for position sensitive detectors
- Citation:
- Águas, H., Nunes Fortunato Silva Silva Figueiredo Soares Martins P. E. R. "Hydrogenated amorphous silicon / ZnO shottky heterojunction for position sensitive detectors." Materials Research Society Symposium - Proceedings. Vol. 664. 2001. A2661-A2666.
Abstract:
In this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/aSi:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ≈ 2% and a good sensitivity to the light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.
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