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This work aims to study the role of the r.f. electrode configuration on the plasma characteristics of a PECVD asymmetric reactor. The configurations used are the usual diode configuration, the triode configuration and a new configuration that we named short-circuited grid electrode (SGE). The plasma generated was characterized with the use of a Langmuir probe and an impedance probe. We demonstrate that the plasma parameters are highly dependent on the reactor geometry. The results achieved show that by changing the r.f. electrode configuration the DC self-bias varies from about 100 to close to 0 V. This variation causes changes in the ion bombardment of the reactor surfaces, which can affect the growing of the films deposited. We also demonstrate that for the SGE configuration the area seen by the plasma does not correspond to the exposed physical area of the electrode, and we suggest a model to explain this phenomenon.

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In this work we present a study of influence of ion bombardment on the optical, electrical and compositional properties of the intrinsic amorphous silicon films deposited in a modified triode plasma-enhanced chemical vapour deposition (PECVD) reactor. The application of a DC voltage to a grid placed in front of the r.f. electrode allowed us to control the energy and polarity of the ions striking the substrate during film growth. The results show a variation by two orders of magnitude in the dark conductivity from 10-10 to 6.2 × 10-12 (Ω cm)-1, while the photosensitivity varied from 2 × 105 to 2 × 107. A process plasma that takes place in the γ-type regime was associated with the use of a negative bias, while a process plasma like the one of the α-type regime was associated with the use of a positive bias. The films deposited with a bias ≈ 38 V are highly intrinsic and the abrupt change in the conductivity properties observed at this bias is attributed to a change in the density of the states ascribed to the position of the Fermi level. That is, a precise control of the energy of the ions striking the substrate during the film growth leads to improved film optoelectronic properties, very important for device applications. © 2001 Elsevier Science Ltd. All rights reserved.

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In this work we present a study performed in a plasma-enhanced chemical vapour deposition reactor, where different rf electrode configurations were used with the aim of achieving conditions that lead to growth of highly uniform amorphous silicon films, with the required electronic quality, at high growth rates. This study consists in determining the plasma characteristics under different electrode configurations, in an argon plasma, using as diagnostic tools a Langmuir probe and impedance probe. These results were correlated with the hydrogenated amorphous silicon films produced, thereby allowing us to establish the best electrode configuration to grow electronic-grade-quality amorphous silicon films.

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In today's main crystalline silicon (c-Si) applications in MOS (metal-oxide-silicon), MIS (metal-insulator-semiconductor) or SIS (Semiconductor-Insulator-Semiconductor), the growing of the oxide layer plays the main role, dictating the device performances, in particular if it has to be grown by a low temperature process. Of fundamental importance is the SiO2 interface with the c-Si. A very low defect density interface is desirable so that the number of trapping states can be reduced and the devices performance optimised. A two step low temperature oxidation process is proposed. The process consists of growing first a layer of oxide by a wet process and then treating the grown oxide with an oxygen plasma. The oxygen ions from the plasma bombard the oxide causing compaction of the oxide and a decrease in the interface roughness and defect density. Infrared spectroscopy and spectroscopic ellipsometry measurements were performed on the samples to determine the oxide thickness, optical and structural properties. SIS structures were built and capacitance measurements were performed under dark and illuminated conditions from which were inferred the interface defect density and correlated with the oxide growth process.

The partly-articulated postcranial remains of two sauropod skeletons recently found in Tang Vay (Savannakhet Province, Laos) are assigned to the species Tangvayosaurus hoffeti (nov. gen., nov. sp.). The derived characters present in the new material confirm the presence of titanosaurs in South East Asia at the end of the Early Cretaceous, but are not consistent with its placement within Titanosaurus genus as first done by Hoffet in 1942. All of the material relative to this species is therefore referred to a new genus: Tangvayosaurus. Tangvayosaurus and the Thai genus Phuwiangosaurus have strong affinities and are considered as primitive titanosaurs.

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Most known teaching experiences focus on parallel computing courses only, but some teaching experiences on distributed computing courses have also been reported. In this paper we describe a course on Parallel and Distributed Processing that is taught at undergraduate level in the Computer Science degree of our University.This course presents an integrated approach concerning concurrency, parallelism, and distribution issues. It’s a breadth-first course addressing a wide spectrum of abstractions: the theoretical component focus on the fundamental abstractions to model concurrent systems, including process cooperation schemes, concurrent programming models, data and control distribution, concurrency control and recovery in transactional systems, and parallel processing models; the practical component illustrates the design and implementation issues involved in selected topics such as a data and control distribution problem, a distributed transaction-based support system and a parallel algorithm.We also discuss how this approach has been contributing to prepare the student to further actions regarding research and development of concurrent, distributed, or parallel systems.

Most known teaching experiences focus on parallel computing courses only, but some teaching experiences on distributed computing courses have also been reported. In this paper we describe a course on Parallel and Distributed Processing that is taught at undergraduate level in the Computer Science degree of our University.This course presents an integrated approach concerning concurrency, parallelism, and distribution issues. It's a breadth-first course addressing a wide spectrum of abstractions: the theoretical component focus on the fundamental abstractions to model concurrent systems, including process cooperation schemes, concurrent programming models, data and control distribution, concurrency control and recovery in transactional systems, and parallel processing models; the practical component illustrates the design and implementation issues involved in selected topics such as a data and control distribution problem, a distributed transaction-based support system and a parallel algorithm.We also discuss how this approach has been contributing to prepare the student to further actions regarding research and development of concurrent, distributed, or parallel systems.

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Partners search and selection is an important activity in the life cycle of a Virtual Enterprise. Among other factors, the commitment of the potential partners to fulfil quality requirements is a major decision criterion during the selection phase. An approach to search suppliers in suppliers’ directories available on Internet is presented and the major negotiation steps leading to an adequate selection of partners are introduced. The quality-related information management functionalities required in a virtual enterprise support platform are also discussed.

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