Publications

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2004
Raniero, L, Pereira, Zhang, and SB. "{Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques}." 338 (2004): 206-210. AbstractWebsite
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Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Martins, RMS, Silva, M. A. G., RJC, Fernandes, and FMB. "{In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films}." 455-456 (2004): 342-345. AbstractWebsite
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Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
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Pereira, L, Aguas, H, and Raniero. "{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}." 455-456 (2004): 112-115. AbstractWebsite
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Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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Pereira, L, Aguas, H, Igreja, and R. "{Sputtering preparation of silicon nitride thin films for gate dielectric applications}." 455-456 (2004): 69-72. AbstractWebsite
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2003
Aguas, H, Raniero, L, and Pereira. "{Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz}." 762 (2003): 589-594. AbstractWebsite
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Mauricio, RM, Pereira, LGR, Goncalves, and LC. "{Potential of semi-automated in vitro gas production technique for sorghum silages evaluation}." 32 (2003): 1013-1020. AbstractWebsite
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2001
Ferreira, I., M. E. V. Costa, L. Pereira, E. Fortunato, R. Martins, A. R. Ramos, and M. F. Silva. "{Silicon carbide alloys produced by hot wire, hot wire plasma-assisted and plasma-enhanced CVD techniques}." Applied Surface Science. 184 (2001): 8-19. AbstractWebsite
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