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I
Raniero, L., N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins. "Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p–i–n solar cell." Solar energy materials and solar cells. 87.1 (2005): 349-355. Abstract
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Ferreira, I., H. Aguas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins. "Influence of the H2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique." MRS Proceedings. 507.1 (1998). Abstract
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Ferreira, I., H. Aguas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins. "INFLUENCE OF THE H 2 DILUTION AND FILAMENT TEMPERATURE ON THE." (Submitted). Abstract
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Assuncao, V., E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M. E. V. Costa, and R. Martins. "Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature." Thin Solid Films. 427.1 (2003): 401-405. Abstract
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Raniero, L., A. Gonçalves, A. Pimentel, I. Ferreira, S. Zhang, L. Pereira, H. Aguas, E. Fortunato, and R. Martins. "Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides." MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 862 (2005): 543. Abstract
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Braz Fernandes, Francisco Manuel, Isabel Ferreira, Rodrigo Martins, Paula M. Vilarinho, and Elvira Fortunato. "Influence of Hydrogen Gas Dilution on the Properties of Silicon-Doped Thin Films Prepared by the Hot-Wire Plasma-Assisted Technique." Key Engineering Materials. 230 (2002): 591-594. Abstract
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Zeman, M., I. Ferreira, MJ Geerts, and JW Metselaar. "The influence of deposition parameters on the growth of a-SiGe: H alloys in a plasma CVD system." Applied Surface Science. 46.1 (1990): 245-248. Abstract
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Carvalho, C., JMM De Nijs, I. Ferreira, E. Fortunato, and R. Martins. "Improvement of the ITO-p Interface In a-SI: H Solar Cells Using a Thin SiO Intermediate Layer." MRS Proceedings. 426.1 (1996). Abstract
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Nunes de Carvalho, C., JMM De Nijs, I. Ferreira, E. Fortunato, and R. Martins. "Improvement of the ITO-p Interface in a-Si: H solar cells using a thin SiO Intermediate Layer." MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 426 (1996): 25-30. Abstract
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Nijs, JMM De, I. Ferreira, E. Fortunato, and R. Martins. "Improvement of the ITO-P Interface in a-Si: H Solar Cells Using a Thin SiO Intermediate Layer." MRS Proceedings. 420.1 (1996). Abstract
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Martins, R., I. Ferreira, A. Cabrita, and E. Fortunato. "Improvement of a-Si: H device stability and performances by proper design of the interfaces." Journal of Non-Crystalline Solids. 266 (2000): 1094-1098. Abstract
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Ferreira, I., E. Fortunato, P. Vilarinho, A. S. Viana, A. R. Ramos, E. Alves, and R. Martins. "Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques." Journal of non-crystalline solids. 352.9 (2006): 1361-1366. Abstract
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Filonovich, Sergej Alexandrovich, Hugo Águas, Tito Busani, António Vicente, Andreia Araújo, Diana Gaspar, Marcia Vilarigues, Joaquim Leitão, Elvira Fortunato, and Rodrigo Martins. "Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B (CH3) 3." Science and Technology of Advanced Materials. 13.4 (2012): 045004. Abstract
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Ferreira, I., E. Fortunato, R. Martins, and P. Vilarinho. "Hot-wire plasma assisted chemical vapor deposition: A deposition technique to obtain silicon thin films." Journal of applied physics. 91.3 (2002): 1644-1649. Abstract
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Fortunato, E., L. Raniero, L. Silva, A. Gonçalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. Gonçalves, and I. Ferreira. "Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications." Solar Energy Materials and Solar Cells. 92.12 (2008): 1605-1610. Abstract
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Bender, Marcus, Elvira Fortunato, Patrícia Nunes, Isabel Ferreira, António Marques, Rodrigo Martins, Nikos Katsarakis, Volker Cimalla, and George Kiriakidis. "Highly sensitive ZnO ozone detectors at room temperature." Japanese journal of applied physics. 42 (2003): 435. Abstract
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Marques, António, Isabel Ferreira, Rodrigo Martins, Patrícia Nunes, Hugo Águas, Elvira Fortunato, Daniel Costa, and Maria Elisabete V. Costa. "Highly conductive/transparent ZnO: Al thin films deposited at room temperature by rf magnetron sputtering." Key Engineering Materials. 230 (2002): 571-574. Abstract
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Filonovich, SA, H. Aguas, I. Bernacka-Wojcik, C. Gaspar, M. Vilarigues, LB Silva, E. Fortunato, and R. Martins. "Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure." Vacuum. 83.10 (2009): 1253-1256. Abstract
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Martins, R., A. Macarico, I. Ferreira, R. Nunes, A. Bicho, and E. Fortunato. "Highly conductive and highly transparent n-type microcrystalline silicon thin films." Thin Solid Films. 303.1 (1997): 47-52. Abstract
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Fortunato, E., V. Assuncao, A. Goncalves, A. Marques, H. Aguas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "High quality conductive gallium-doped zinc oxide films deposited at room temperature." Thin Solid Films. 451 (2004): 443-447. Abstract
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Fortunato, E., A. Pimentel, L. Pereira, A. Goncalves, G. Lavareda, H. Aguas, I. Ferreira, CN Carvalho, and R. Martins. "High field-effect mobility zinc oxide thin film transistors produced at room temperature." Journal of non-Crystalline solids. 338 (2004): 806-809. Abstract
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Fortunato, Elvira, Alexandra Goncalves, Vitor Assuncao, António Marques, Hugo Águas, Luıs Pereira, Isabel Ferreira, and Rodrigo Martins. "Growth of ZnO: Ga thin films at room temperature on polymeric substrates: thickness dependence." Thin Solid Films. 442.1 (2003): 121-126. Abstract
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Pereira, LuÍs, Isabel Ferreira, Rodrigo Martins, Hugo Águas, Elvira Fortunato, Leandro Raniero, S. Zang, and L. Boufendi. "Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz." Materials Science Forum. 455 (2004): 532-535. Abstract
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Ferreira, Isabel, Rodrigo Martins, and Elvira Fortunato. "Growth Model of Gas Species Produced by the Hot-Wire and Hot-Wire Plasma-Assisted Techniques." Key Engineering Materials. 230 (2002): 603-606. Abstract
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "Gate-bias stress in amorphous oxide semiconductors thin-film transistors." Applied Physics Letters. 95.6 (2009): 063502-3. Abstract
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