b d Morawiec, S.a b, Mendes Filonovich Mateus Mirabella Aguas Ferreira Simone Fortunato Martins Priolo Crupi M. J. a S. "
Photocurrent enhancement in thin a-Si:H solar cells via plasmonic light trapping."
Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2014-January. 2014.
AbstractPhotocurrent enhancement in thin a-Si:H solar cells due to the plasmonic light trapping is investigated, and correlated with the morphology and the optical properties of the selfassembled silver nanoparticles incorporated in the cells' back reflector. © 2014 Optical Society of America.
Meng, L., Macarico Martins A. R. "
Study of annealed indium tin oxide films prepared by rf reactive magnetron sputtering."
Materials Research Society Symposium - Proceedings. Vol. 388. 1995. 379-384.
AbstractTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as-deposited film is about 1.3×10-1 Ω* cm and decreases down to 6.9×10-3 Ω* cm as the annealing temperature is increased up to 500°C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.
Mei, S.a, Yang Ferreira Martins J. a J. M. "
Aqueous tape casting of low-k cordierite substrate: The influence of glass content."
Materials Science Forum. 455-456 (2004): 168-171.
AbstractThick films of cordierite-based glass ceramics were prepared by aqueous tape casting from suspensions containing 80-wt% solids. The weight proportions of cordierite/glass ranged from 70/30 to 30/70 in order to investigate the effect of glass content on the rheological behaviour and on the microstructures and properties of the green tapes. Suspensions with 50 to 60-wt% glass content exhibited the lowest viscosity values among all the slurries investigated, while the green tape containing 30-wt% glass presented homogenous microstructures at both top and bottom surfaces, contrarily to the observations for the other compositions. The green densities increased with glass content. The sintered tapes (1150°C, 2h) containing 50 to 60-wt% glass exhibited the lowest values for the dielectric constant (∼5.2) and dielectric loss (∼0.002) at 1MHz.
Martins, R., Macarico Ferreira Nunes Bicho Fortunato A. I. R. "
Correlation between electrical-optical and structural properties of microcrystalline silicon N type films."
Materials Research Society Symposium - Proceedings. Vol. 420. 1996. 807-812.
AbstractWide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type μc-Si based films. Here, emphasis is given to the production of n-type μc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1.
Martins, R.a, Costa Águas Soares Marques Ferreira Borges Fortunato D. a H. a. "
Detection limits of a nip a-Si:H linear array position sensitive detector."
Materials Research Society Symposium Proceedings. Vol. 808. 2004. 507-512.
AbstractThis paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 μm (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device non-linearity increases to values above 4%.
b b b b b b b Martins, R.a b, Figueiredo Silva Águas Soares Marques Ferreira Fortunato J. a V. a. "
32 Linear array position sensitive detector based on NIP and hetero a-Si:H microdevices."
Journal of Non-Crystalline Solids. 299-302 (2002): 1283-1288.
AbstractIn this paper we present results concerning the performance exhibited by an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors based on nip and hetero amorphous silicon structures, with a total active area size below 1 cm2 linearity, its spatial resolution and response time, that make it one of the most interesting analog detector to be used in unmanned optical inspection control systems where a continuous detection process is required. This opens a wide range of applications for amorphous silicon devices in the area of image processing. © 2002 Elsevier Science B.V. All rights reserved.