Understanding the specific molecular interactions between proteins and β1,3-1,4-mixed-linked d-glucans is fundamental to harvest the full biological and biotechnological potential of these carbohydrates and of proteins that specifically recognize them. The family 11 carbohydrate-binding module from Clostridium thermocellum (CtCBM11) is known for its binding preference for β1,3-1,4-mixed-linked over β1,4-linked glucans. Despite the growing industrial interest of this protein for the biotransformation of lignocellulosic biomass, the molecular determinants of its ligand specificity are not well defined. In this report, a combined approach of methodologies was used to unravel, at a molecular level, the ligand recognition of CtCBM11. The analysis of the interaction by carbohydrate microarrays and NMR and the crystal structures of CtCBM11 bound to β1,3-1,4-linked glucose oligosaccharides showed that both the chain length and the position of the β1,3-linkage are important for recognition, and identified the tetrasaccharide Glcβ1,4Glcβ1,4Glcβ1,3Glc sequence as a minimum epitope required for binding. The structural data, along with site-directed mutagenesis and ITC studies, demonstrated the specificity of CtCBM11 for the twisted conformation of β1,3-1,4-mixed-linked glucans. This is mediated by a conformation–selection mechanism of the ligand in the binding cleft through CH-π stacking and a hydrogen bonding network, which is dependent not only on ligand chain length, but also on the presence of a β1,3-linkage at the reducing end and at specific positions along the β1,4-linked glucan chain. The understanding of the detailed mechanism by which CtCBM11 can distinguish between linear and mixed-linked β-glucans strengthens its exploitation for the design of new biomolecules with improved capabilities and applications in health and agriculture. Database Structural data are available in the Protein Data Bank under the accession codes 6R3M and 6R31.

Amorphous indium-gallium-zinc-oxide (a-IGZO) based memristive devices with molybdenum contacts as both top and bottom electrodes are presented aiming to be used in neuromorphic applications. Devices down to 4 µm2 are fabricated using conventional photolithography processes, with an extraordinary yield of 100%. X-ray photoelectron spectroscopy and transmission electron microscopy performed on the developed structures confirm the presence of a thin intermixed oxide layer (4–5 nm) containing Mo6+ oxidation state at the interface with the bottom contact. This results in Schottky diode-like characteristics at the pristine state with a rectification ratio of 3 orders of magnitude. The devices have electroforming-free and area-dependent analog resistive switching properties. Temperature analysis of resistive switching I–V data reveals barrier height variations of the junction. Several synaptic functions, such as synaptic potentiation and depression as response to programmed pulses, short- to long-term plasticity transition (STP to LTP) and “learning experience” properties are presented. The Mo/IGZO/Mo memristive device shows potential application of an electronic synapse for brain-inspired computing application. Integration in System-on-Panel architectures is possible at negligible cost, because all materials are used in commercial IGZO thin-film transistor fabrication.

This paper deals with punching of reinforced high strength concrete (HSC) flat slabs. Despite the use of HSC increased significantly in the last years, the experimental research on punching behavior of HSC slabs is still limited. Furthermore, most of this past research adopted concrete compressive strength lower than 90 MPa. In a previous work by this research group three specimens with concrete compressive strength around 120 MPa and one with normal strength concrete (NSC) were tested. The present work represents the continuation of the previous activity and it is focused on the rational use of HSC. Four specimens with HSC and one of NSC were tested under monotonic vertical loading. The HSC was placed only in the slab-column connection region and it was limited to a thin layer in the compressive zone, in order to have a more economical and sustainable solution. This rational use of the HSC showed excellent results in terms of punching strength. Limiting the HSC to a thin layer in the compressive zone resulted in an almost equal punching strength to that obtained with the slab entirely casted in HSC.

An innovative system for the flexural strengthening of RC structures designated continuous reinforcement embedded at ends (CREatE) is presented in this research work. The main characteristics and procedures for the application of this new strengthening technique were described. To evaluate the performance and efficiency of this technique, a set of RC T-beams was subjected to a four-point bending test setup. The reference RC T-beam was not strengthened; all other RC T-beams were strengthened with postinstalled stainless steel bars. Different application arrangements and different amounts of reinforcement were considered, and the CREatE technique was tested under monotonic and cyclic loading histories. The tests were modeled using the nonlinear finite-element method (FEM) to predict the performance of the RC T-beams, which allowed analyzing, in detail and with good agreement with the experiments, the influence of the CREatE technique on the (1) strains developed in the concrete, (2) cracking patterns, and (3) strains developed in the stirrups. Apart from the expected increases in the flexural stiffness and load-bearing capacity of the T-beams, the results showed that the use of the CREatE technique led to higher ductility indexes in the displacement compared with traditional techniques. Moreover, with the CREatE technique, premature debonding of the reinforcement material from the concrete tensioned surface - commonly observed in externally bonded reinforcement (EBR) strengthening systems - was eliminated. © 2020 American Society of Civil Engineers.

{Two new bis(aryl-imino)-acenaphthene, Ar-BIAN (Ar = 2

Journal of Analytical Atomic Spectrometry (2020), 35, 2920-2927, doi:10.1039/D0JA00307G

This paper reports on-chip rail-to-rail timing signals generation thin-film circuits for the first time. These circuits, based on a-IGZO thin-film transistors (TFTs) with a simple staggered bottom gate structure, allow row and column selection of a sensor matrix embedded in a flexible radiation sensing system. They include on-chip clock generator (ring oscillator), column selector (shift register) and row-selector (a frequency divider and a shift register). They are realised with rail-to-rail logic gates with level-shifting ability that can perform inversion and NAND logic operations. These logic gates are capable of providing full output swing between supply rails, $V_{DD}$ and $V_{SS}$ , by introducing a single additional switch for each input in bootstrapping logic gates. These circuits were characterised under normal ambient atmosphere and show an improved performance compared to the conventional logic gates with diode connected load and pseudo CMOS counterparts. By using these high-performance logic gates, a complete rail-to-rail frequency divider is presented from measurements using D-Flip Flop. In order to realize a complete compact system, an on-chip ring oscillator (output clock frequency around 1 kHz) and a shift register are also presented from simulations, where these circuits show a power consumption of 1.5 mW and 0.82 mW at a supply voltage of 8 V, respectively. While the circuit concepts described here were designed for an X-ray sensing system, they can be readily expanded to other domains where flexible on-chip timing signal generation is required, such as, smart packaging, biomedical wearable devices and RFIDs.