Louren{\c c}o, João, José C. Cunha, H. Krawczyk, P. Kuzora, M. Neyman, and B. Wiszniewski. "
An integrated testing and debugging environment for parallel and distributed programs."
EUROMICRO Conference (1997): 291.
AbstractTo achieve a certain degree of confidence that a given program follows its specification, a testing phase must be included in the program development process, and also a complementary debugging phase to help locating the program’s bugs. This paper presents an environment which results of the composition and integration of two basic tools: STEPS (Structural TEsting of Parallel Software), which is a testing tool, and DDBG (Distributed DeBuGger), which is a debugging tool. The two tools are presented individually as stand-alone tools, and we describe how they were combined through the use of another intermediate tool: DEIPA (Deterministic re-Execution and Interactive Program Analysis). We claim that the result achieved is a very effective testing and debugging environment.
Fantoni, A., Vieira Cruz Martins M. J. R. "
Numerical simulation of a/μc-Si:H p-i-n photo-diode under non-uniform illumination: A 2D transport problem."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2997. 1997. 234-243.
AbstractWe report here about a computer simulation program, based on a comprehensive physical and numerical model of an a/μc-Si:H p-i-n device, applied to the 2D problem of describing the transport properties within the structure under non- uniform illumination. The continuity equations for holes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The basic semiconductor equations are implemented with a recombination mechanism reflecting the microcrystalline structure of the different layers. The lateral effects occurring within the structure, due to the non-uniformity of the radiation are outlined. The simulation results obtained for different wavelengths of the incident light are compared and shown their dependence on the energy of the radiation. The results of simulating a p-i-n μc-Si:H junctions under non-uniform illumination is that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. ©2004 Copyright SPIE - The International Society for Optical Engineering.
Martins, R., Macarico Ferreira Fortunato A. I. E. "
Role of the gas flow parameters on the uniformity of films produced by PECVD technique."
Materials Research Society Symposium - Proceedings. Vol. 467. 1997. 609-614.
AbstractThe aim of this work is to present an analytical model able to interpret the experimental data of the dependence of film's uniformity on the discharge pressure, gas flow and temperature used during the production of thin films by the plasma enhancement chemical vapour deposition technique, under optimised electrode's geometry and electric field distribution. To do so, the gas flow is considered to be quasi-incompressible and inviscous leading to the establishment of the electro-fluid-mechanics equations able to interpret the film's uniformity over the substrate area, when the discharge process takes place in the low power regime.