Owing to the existing or predictable water deficiencies in the South of Portugal, it is necessary to carry out the appropriate management of water resources, by reducing and/or minimizing the negative impacts of untreated/treated domestic effluents in the aquatic environment. As Portugal has a great diversity of ecoclimatic areas, five different stabilization pond systems were chosen to carry out a control study during one year (from March 1991 to March 1992). According to Pina Manique & Albuquerque the ecological classification of these stations is different, varying from Ibero-mediterranean (continental) up to mediterranean (maritime). The physical and chemical parameters studied were: temperature, pH, dissolved oxygen, conductivity, BOD, COD, nitrates, nitrites, ammonia and total nitrogen, total suspended and volatile solids, total phosphorus and orthophosphates. The microbiological parameters studied were: total and faecal coliforms, faecal Streptococci, Clostridium perfringens and Pseudomonas aeruginosa. The correlations between climatic parameters and the efficiency of the removal of organic matter were analysed.

The analytical values obtained from five WSP systems located in different ecoclimatic zones in the centre and South of Portugal, were subjected to a statistical analysis of K and K20 values (as used in the van Hoff-Arrhenius equation) utilizing an analysis of variance and a vectorial analysis of principal components. Significant differences between K and K20 values in facultative, maturation ponds and in the whole system were verified. The projection of the first principal components of eigenvectors made possible the classification of the stations, showing the existence of similarities and discrepancies in their removal BOD kinetics behaviour. The K20 value must be estimated and taken into account for the design of waste stabilization ponds.

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The aim of this study was to evaluate the possibility of the re-use of industrial orange wastes as organic soil fertilizer. The assay was performed with a lettuce variety widely produced and consumed in Portugal and, consequently, with great commercial interest. Lactuca sativa L. (osteolata variety) was cultivated in Mitcherlich pots containing samples of a poor soil of the Algarve region. This soil was prepared with different amounts of either pulp or peel orange-wastes from an orange-juice industry. The wastes were applied according to an increasing amount of nitrogen. The results obtained were submitted to statistical tests, in order to find the relations between the production of fresh and dry matter, and the percentages of nutrients (nitrogen, phosphorous, potassium, calcium, magnesium and iron) that were obtained in the dry matter, with the types and amounts of wastes applied. An increase in the average production of both fresh- and dry-matter with increasing amounts of either pulp or peel wastes applied, and high positive correlation coefficients between the average percentages of nitrogen, phosphorus and potassium obtained in the dry matter with the average production of both fresh- and dry-matter were found. No phytotoxicity was observed.

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The aim of this work is to provide the basis for the interpretation, under steady state and in the low-voltage regime of the dark current-density-voltage (J-V) characteristics of transverse asymmetric amorphous silicon (a-Si:H) p-i-n and n-i-p diodes. The transverse asymmetric a-Si:H diodes present ratios between the metal contact and the underneath doped layer areas larger than five, leading to the inclusion, in the diode equation, of a lateral leakage current, responsible for the high saturation current density and the forward shape of the J-V curves recorded. The leakage current depends on the lateral spatial potential developed with which varies following a power-law dependence. The experimental J-V curves in diodes with the doped layer around the metal contact unetched and etched prove the role and origin of this lateral leakage current and, thus, the proposed model. © 1995 American Institute of Physics.

The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD). The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

The aim of this work is to present the main optoelectronic characteristics of large area 1D position sensitive detectors based on amorphous silicon p-i-n diodes. From that, the device resolution, response time and detectivity are derived and discussed concerning the field of applications of the 1D thin film position sensitive detectors.

In the past we have developed a transient technique, called the Flying Spot Technique (FST). FST allows, not only to infer the ambipolar diffusion length but also the effective lifetime of the photogenerated carriers once the light spot velocity and geometry of the structure were known. In this paper, we propose to apply this technique backwards in order to detect the path and velocity of an object that is moving in the direction of a light source. The light reflected back from the object is analyzed through a p.i.n structure being the transient transverse photovoltage dependent on the movement of the object (position and velocity). Assuming that the transport properties of the material and the geometry of the device are known and using a triangulation method we show that it is possible to map the movement of the object. Details concerning material characterization, simulation and device geometry are presented.

PIN devices based on hydrogenated amorphous silicon (a-Si:H) became fundamental elements of many different types sensors, based on either the transverse or the lateral photovoltaic effect. In the past we have developed a transient technique, called the Flying Spot Technique (FST), based on the lateral photoeffect. FST allows, not only to infer the ambipolar diffusion length but also the effective lifetime of the photogenerated carriers once the light spot velocity and geometry of the structure were known. In this paper we propose to apply this technique backwards in order to detect the path and velocity of an object that is moving in a light source direction. The light reflected back from the object is analyzed through p.i.n. structure being the transient transverse photovoltage dependent on the object movement (position and velocity). Assuming known the transport properties of the material and the geometry of the device and using a triangulation method we show that it is possible to map the object movement. Details concerning material characterization, simulation and device geometry are presented.

The aim of this work is to present the main optoelectronic characteristics of large-area one-dimensional position-sensitive detectors (1D TFPSDs) based on amorphous silicon (a-Si) p-i-n diodes. From that, the device resolution, response time and detectivity (defined as being the reciprocal of the noise equivalent power pattern) are derived and discussed concerning the field of applications of the 1D TFPSDs. © 1996.

The aim of this work is to provide the basis for the interpretation, under steady state conditions, of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSD) and the determination of its linear spatial detection limits, function of the device, and light spot source characteristics. This leads to the development of a model, based on the application of the Poisson, continuity, and current density equations in the p-i-n junction, where two thin resistive layers, as equipotentials, are considered on both sides of the doped layers. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlations discussed. © 1995 American Institute of Physics.