UV-enhanced monocrystalline zinc sulphide optical sensors with high quantum efficiency have been developed by spray deposition of heavy fluorine-doped tin oxide (FTO) thin films onto the surface of zinc sulphide monocrystals as an alternative to the UV-enhanced high-efficiency silicon photodetectors commonly used in precise radiometric and spectroscopic measurements as well as to new sensors based on SiC and GaN. The fabricated sensors have an unbiased internal quantum efficiency that is nearly 100% from 250 to 320 nm, and the typical sensitivity at 250 nm is 0.15 A W-1. The sensors are insensitive to solar radiation in conditions on the earth and can be used as solar blind photodetectors for precision UV measurements under direct solar illumination for both terrestrial and space applications. © 1998 Elsevier Science S.A. All rights reserved.

UV-enhanced monocrystalline zinc sulphide optical sensors with high quantum efficiency have been developed by spray deposition of heavy fluorine-doped tin oxide (FTO) thin films onto the surface of zinc sulphide monocrystals as an alternative to the UV-enhanced high-efficiency silicon photodetectors commonly used in precise radiometric and spectroscopic measurements as well as to new sensors based on SiC and GaN. The fabricated sensors have an unbiased internal quantum efficiency that is nearly 100% from 250 to 320 nm, and the typical sensitivity at 250 nm is 0.15 A W-1. The sensors are insensitive to solar radiation in conditions on the earth and can be used as solar blind photodetectors for precision UV measurements under direct solar illumination for both terrestrial and space applications.

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In this paper we discuss several issues concerning the design and implementation of a debugger for parallel and distributed applications. This debugger uses a client-server approach to isolate the debugging user-interface from the debugging services, by way of a two-level structured approach: the component-level to observe and act upon individual processes; and the coordination-level to observe the interprocess relations and act upon them.

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Hydrogenated amorphous silicon photochemical sensors based on Pd metal/insulator/semiconductor (Pd-MIS) structures were produced by plasma enhanced chemical vapour deposition (PECVD) with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases adsorbed, in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than two orders of magnitude variation on the reverse dark current in the presence of 400 ppm hydrogen. When the sensors are submitted to light it corresponds a decrease of 45% on the open circuit voltage.

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Parallel debugging is complex and difficult. Complex because the programmer has to deal with multiple program flows and process interactions, and difficult due to the very limited choice on effective and easy-to-use debugging tools for parallel programming. Simple and necessary features for parallel debugging are absent even from commercial debuggers, such as a record-replay feature, that allows to re-execute multiple times a parallel application assuring that during each re-execution the internal race conditions are solved in the same way they were in the first time. Some work has been done on record-replay techniques for parallel and distributed applications, but just a few have been applied to specific systems (such as PVM or MPI), and even less have produced working prototypes. In this paper we describe a method designed to work with the PVM system and how it was implemented to provide a working prototype.

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The aim of this work is to study the role of hydrogen dilution and filament temperature on the properties of nanocrystalline silicon thin films (undoped and doped) produced by the hot wire technique. These deposition parameters are correlated to the film's structure, composition and electro-optical properties with special emphasis on boron doped nanocrystalline silicon carbide reported here. © 1998 Elsevier Science B.V. All rights reserved.

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1 - xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications. © 1998 Elsevier Science S.A. All rights reserved.

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1-xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications.

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We have developed new types of functional and smart optical silicon sensors, based on ITO/multichannel insulator/silicon structures, which are able to execute electronic functions such as amplifying the photocurrent (without avalanche multiplication), transforming the input optical signal into a radio frequency output signal and transforming the analogue input optical signal to a digital output form, without external active electronic components. These new functional optical sensors allow a substantial simplification of the registration of optical signals as well as of the electronic scheme to be used. © 1998 Elsevier Science S.A. All rights reserved.

We have developed new types of functional and smart optical silicon sensors, based on ITO/multichannel insulator/silicon structures, which are able to execute electronic functions such as amplifying the photocurrent (without avalanche multiplication), transforming the input optical signal into a radio frequency output signal and transforming the analogue input optical signal to a digital output form, without external active electronic components. These new functional optical sensors allow as substantial simplification of the registration of optical signals as well as of the electronic scheme to be used.

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Mossbauer and EPR spectroscopies were used to characterize the Fe clusters in an Fe-S protein isolated from Desulfovibrio desulfuricans (ATCC 27774). This protein was previously thought to contain hexanuclear Fe clusters, but a recent X-ray crystallographic measurement on a similar protein isolated from Desulfovibrio vulgaris showed that the protein contains two tetranuclear clusters, a cubane-type [4Fe-4S] cluster and a mixed-ligand cluster of novel structure [Lindley et al. (1997) Abstract, Chemistry of Metals in Biological Systems, European Research Conference, Tomar, Portugal]. Three protein samples poised at different redox potentials (as-purified, 40 and 320 mV) were investigated. In all three samples, the [4Fe-4S] cluster was found to be present in the diamagnetic 2+ oxidation state and exhibited typical Mossbauer spectra. The novel-structure cluster was found to be redox active. In the 320-mV and as-purified samples, the cluster is at a redox equilibrium between its fully oxidized and one-electron reduced states. In the 40-mV sample, the cluster is in a two-electron reduced state. Distinct spectral components associated with the four Fe sites of cluster 2 in the three oxidation states were identified. The spectroscopic parameters obtained for the Fe sites reflect different ligand environments, making it possible to assign the spectral components to individual Fe sites. In the fully oxidized state, all four iron ions are high-spin ferric and antiferromagnetically coupled to form a diamagnetic S = 0 state. In the one-electron and two-electron reduced states, the reducing electrons were found to localize, consecutively, onto two Fe sites that are rich in oxygen/nitrogen ligands. Based on the X-ray structure and the Mossbauer parameters, attempts could be made to identify the reduced Fe sites. For the two-electron reduced cluster, EPR and Mossbauer data indicate that the cluster is paramagnetic with a nonzero interger spin. For the one-electron reduced cluster, the data suggest a half-integer spin of 9/2 Characteristic fine and hyperfine parameters for all four Fe sites were obtained. Structural implications and the nature of the spin-coupling interactions are discussed.

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We have developed a linear thin film position-sensitive detector with 128 elements, based on p.i.n. a-Si:H devices. The incorporation of this sensor into an optical inspection camera makes possible the acquisition of three-dimensional information of an object, using laser triangulation methods. The main advantages of this system, when compared with the conventional charge-coupled devices, are the low complexity of hardware and software used, and that the information can be continuously processed (analogic detection). In this paper, we present the most significant characteristics of the singular one-dimensional thin film position-sensitive detectors that form part of the linear array with 128 sensors. © 1998 Elsevier Science S.A.

Pd-metal/insulator/semiconductor based on hydrogenated amorphous silicon were produced by plasma enhanced chemical vapour deposition with two different oxidised surfaces: thermal in ambient air and chemical with hydrogen peroxide. The diode characteristics have been investigated using dark and light current as f(v) measurements in the temperature range from 300 K to 380 K, from which it was possible to infer the electron barrier height. The data obtained show that the incorporation of a thin insulator layer between the semiconductor and the metal improves the performances of the devices by preventing the formation of suicides at the interface. Apart from that we also show that the MIS structures with the thermal oxide presents 'better' performances than the ones with the chemical oxide due to the type of interface states and of the oxide charges associated with the interface between the insulator and the semiconductor. © 1998 Elsevier Science B.V. All rights reserved.

In order to address the diversity of existing parallel programming models, it is important to provide development environments that can be incrementally extended with new services. Concerning the debugging of process based models, we have previously designed and implemented a basic interface that can be accessed by other tools as well as by debugging modules associated with high-level programming languages.

This paper describes our experience with the design and implementation of a distributed debugger for C/PVM programs within the scope of the SEPP and HPCTI Copernicus projects. These projects aimed at the development of an integrated parallel software engineering environment based on a high-level graphical parallel programming model (GRAPNEL) and a set of associated tools supporting graphical edition, compilation, simulated and real parallel execution, testing, debugging, performance monitoring, mapping, and load balancing. We discuss how the development of the debugging tool was strongly influenced by the requirements posed by other tools in the environment, namely support for high-level graphical debugging of GRAPNEL programs, and support for the integration of static and dynamic analysis tools. We describe the functionalities of the DDBG debugger and its internal architecture, and discuss its integration with two separate tools in the SEPP/HPCTI environment: the GRED graphical editor for GRAPNEL programs, and the STEPS testing tool for C/PVM programs.

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