The aim of this work is to present a model able to explain the role of the lateral drift current on the experimental behaviour exhibited by p-i-n amorphous silicon solar cells (J-V characteristics, responsivity and the apparent device degradation behaviour), when the ratio between the covered and uncovered metal collected areas of the device is higher than one or recrystallization occurs in the edges of the p-i-n junction.

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Hydrogenated amorphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

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The aim of this paper is to present data on the dependence of the electro-optical characteristics and structure of n-type microcrystalline silicon films on the r.f. power used during the deposition of films produced by the plasma-enhanced chemical vapour deposition technique. The interest of these films arise from the fact that they combine some electro-optical advantages of amorphous (wide optical gap) and crystalline materials (electronic behaviour), highly interesting in the production of a wide variety of optoelectronic devices such as solar cells and thin film transistors. In this paper, microcrystalline n-type films presenting simultaneously optical gaps of about 2.3 eV, dark conductivity of 6.5 S cm-1 and Hall mobility of about 0.86 cm2 V-1 s-1 will be reported, the highest combined values for n-type microcrystalline silicon films, as far as we know. © 1997 Elsevier Science S.A.

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To achieve a certain degree of confidence that a given program follows its specification, a testing phase must be included in the program development process, and also a complementary debugging phase to help locating the program’s bugs. This paper presents an environment which results of the composition and integration of two basic tools: STEPS (Structural TEsting of Parallel Software), which is a testing tool, and DDBG (Distributed DeBuGger), which is a debugging tool. The two tools are presented individually as stand-alone tools, and we describe how they were combined through the use of another intermediate tool: DEIPA (Deterministic re-Execution and Interactive Program Analysis). We claim that the result achieved is a very effective testing and debugging environment.

Microcrystalline p-i-n silicon devices are a prospective contender for application in large-area optoelectronics. In this paper we analyse the behaviour of a μc-Si:H p-i-n photodevice under non-uniform illumination. The effect of a spatially non-uniform illumination is to create lateral electric fields and current flows inside the structure. We present in this paper a numerical application of a complete bidimensional model describing the transport properties within the structure. The continuity equations forholes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The results of simulating p-i-n μc-Si:H junctions under non-uniform illumination show that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. © 1997 Elsevier Science S.A.

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We report here about a computer simulation program, based on a comprehensive physical and numerical model of an a/μc-Si:H p-i-n device, applied to the 2D problem of describing the transport properties within the structure under non- uniform illumination. The continuity equations for holes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The basic semiconductor equations are implemented with a recombination mechanism reflecting the microcrystalline structure of the different layers. The lateral effects occurring within the structure, due to the non-uniformity of the radiation are outlined. The simulation results obtained for different wavelengths of the incident light are compared and shown their dependence on the energy of the radiation. The results of simulating a p-i-n μc-Si:H junctions under non-uniform illumination is that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. ©2004 Copyright SPIE - The International Society for Optical Engineering.

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Conversion of Fe ions in solution to the solid phase in ferritin concentrates iron required for cell function. The rate of the Fe phase transition in ferritin is tissue specific and reflects the differential expression of two classes of ferritin subunits (H and L). Early stages of mineralization were probed by rapid freeze-quench Mossbauer, at strong fields (up to 8 T), and EPR spectroscopy in an H-type subunit, recombinant frog ferritin; small numbers of Fe (36 moles/mol of protein) were used to increase Fe3+ in mineral precursor forms, At 25 ms, four Fe3+-oxy species (three Fe dimers and one Fe trimer) were identified, These Fe3+-oxy species were found to form at similar rates and decay subsequently to a distinctive superparamagentic species designated the ''young core.'' The rate of oxidation of Fe2+ (1026 s(-1)) corresponded well to the formation constant for the Fe3+- tyrosinate complex (920 s(-1)) observed previously [Waldo, G. S., & Theil, E. C. (1993) Biochemistry 32, 13261] and, coupled with EPR data, indicates that several or possibly all of the Fe3+-oxy species involve tyrosine. The results, combined with previous Mossbauer studies of Y30F human H-type ferritin which showed decreases in several Fe3+ intermediates and stabilization of Fe2+ [Bauminger, E. R., et al. (1993) Biochem, J. 296, 709], emphasize the involvement of tyrosyl residues in the mineralization of H-type ferritins. The subsequent decay of these multiple Fe3+-oxy species to the superparamagnetic mineral suggests that Fe3+ species in different environments may be translocated as intact units from the protein shell into the ferritin cavity where the conversion to a solid mineral occurs.

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