Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique
- Citation:
- Ferreira, I., Aguas Mendes Fernandes Fortunato Martins H. L. F. "Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique." Materials Research Society Symposium - Proceedings. Vol. 507. 1999. 607-612.
Abstract:
This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4 mWcm-2) and with filament temperatures around 1850 °K have dark conductivities below 10-10 Scm-1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM1.5), with almost no traces of oxygen content. N-doped silicon films were also fabricated under the same conditions which attained conductivities of about 10-2 Scm-1.
Notes:
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