Nanocrystalline silicon carbon doped films prepared by hot wire technique
- Citation:
- Ferreira, I., Fernandas Martins B. R. "Nanocrystalline silicon carbon doped films prepared by hot wire technique." Vacuum. 52 (1999): 147-152.
Abstract:
In this work we present data concerning the structure, composition and electro-optical performances of nanocrystalline silicon carbide doped films produced at the different filament temperatures and hydrogen dilution ratios. The XRD spectra reveal the presence of the typical Si peaks ascribed to (111) (220) and (311) diffraction planes, where no traces of the carbon peaks were found. The average grain sizes ranges from 10 nm to 30 nm, depending on the temperature of filament and hydrogen dilution used. We observed an enhancement of the peak ascribed to the (220) plane when high H dilution rates are used, meaning that the film starts being textured. The infrared data reveal the typical silicon carbide modes and a hydrogen content that varies from 3% to 1%, with the increase of the filament temperature. Besides that, the IR spectra show the typical SiO2 and SiO modes, associated to the oxide species that are mainly incorporated in the surface of the films and can be removed by proper wet etching. The planar conductivity is enhanced as the temperature of the filament is increased, being the highest conductivity achieved in the range of 0.2 (Ωcm)-1 and almost non activated. © 1998 Elsevier Science Ltd. All rights reserved.
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