The electron transport in n-type polycrystalline zinc oxide, nanocrystalline Zinc-Gallium-Oxygen and amorphous Indium-Zinc-Oxygen systems produced by rf magnetron sputtering at room temperature, under different oxygen partial pressure were investigated. It was found that the carrier transport is not band tail limited, being governed by metal cations irrespective to the film's structure. The highest net room temperature electron mobility was achieved on the amorphous films and noticed that for the single component oxides the mobility decreases as the carrier concentration increases, while the reverse behaviour was observed for the multicomponent oxides, independently of their structure. These behaviours are related to the role that negative charge defects in excess of 1010 cm- 2 generated on multicomponent oxides have on carriers scattering and so on their electronic performances. © 2007 Elsevier B.V. All rights reserved.

This work refers to the fabrication of hybrid solar cells based on porous silicon (PS) filled with copper phthalocyanine (CuPc) to form GZO/CuPc-PS/Si/Al structure. We used n-type Si since photoinduced charge transfer from CuPc to Si is observed only for n-type Si. The characteristic 100% peak at 6.8°2θ from XRD confirms that the CuPc coating on PS exists in α-CuPc polymorph. The systematic increase in FWHM of XRD peak at 69.1°2θ and red-shift of LO phonon Raman spectra indicate a progressive reduction of Si nanocrystallites size with increasing etching time and the estimated size agrees well with atomic force microscopic images. The FTIR results confirm the formation of α-CuPc polymorph and it is also corroborated well with XRD and Raman results. © 2008.

During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm2/V · s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/ semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as VTi (intrinsic threshold voltage). © 2008 IEEE.

In this work the electrical and structural properties of two high k materials as hafnium oxide (HfO2) and tantalum oxide (Ta2O5) produced at room temperature are exploited. Aiming low temperature processing two techniques were employed: r.f. sputtering and electron beam evaporation. The sputtered HfO2 films present a nanocrystalline structure when deposited at room temperature. The same does not happen for the evaporated films, which are essentially amorphous. The density and the electrical performance of both sputtered and evaporated films are improved after annealing them at 200 °C. On the other hand, the Ta2O5 samples deposited at room temperature are always amorphous, independently of the technique used. The density and electrical performance are not so sensitive to the annealing process. The set of data obtained show that these dielectrics processed at temperatures below 200 °C present promising properties aiming to produce devices at low temperature with improved interface properties and reduced leakage currents. © 2007 Elsevier B.V. All rights reserved.

Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf magnetron sputtering at room temperature, using amorphous indium zinc oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm2/V s, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7 × 107. The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications. © 2007 Elsevier Ltd. All rights reserved.

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (200 °C, 250 °C and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature and 150 °C during the channel deposition. From the results it was observed that the effect ofpos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of 24.6 cm2/Vs, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an ION/IOFF ratio of 8x107, satisfying all the requirements to be used in active-matrix backplane.

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of postannealing temperatures (200, 250, and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature (S1) and 150 °C (S2) during the channel deposition. From the results, it was observed that the effect of postannealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs (WL=5050 μm) operate in the enhancement mode (n -type), present a high saturation mobility of 24.6 cm2 V s, a subthreshold gate swing voltage of 0.38 V /decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V, and an Ion Ioff ratio of 8× 107, satisfying all the requirements to be used as active-matrix backplane. © 2008 American Institute of Physics.

Molybdenum doped indium oxide (IMO) thin films were deposited on the glass substrates preheated to 450 °C by spray pyrolysis technique. The Mo doping was varied between 0 and 2.0 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In2O3 with a strongest orientation along (222) plane, which is shifted to (400) plane for the increase in Mo doping to 1.25 and 2 at.%. The film deposited with 0.5 at.% Mo doping shows high mobility of 76.9 cm2V- 1s- 1 , resistivity of 1.8 × 10- 3 Ω-cm and high carrier concentration of 4.6 × 1019 cm- 3 with 81.3% transmittance in the visible range between 500 and 800 nm. Further, the transparency extents well into the near-IR range. © 2008 Elsevier B.V. All rights reserved.

In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors (FETs). In this new approach, we are using the cellulose-fiber-based paper in an "interstrate"structure since the device is built on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (> 30 cm2Vs), drain-source current on/off modulation ratio of approximately 104, near-zero threshold voltage, enhancement n-type operation, and subthreshold gate voltage swing of 0.8 V/decade. The cellulose-fiber-based paper FETs' characteristics have been measured in air ambient conditions and present good stability, after two months of being processed. The obtained results outpace those of amorphous Si thin-film transistors (TFTs) and rival with the same oxide-based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and low-cost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID, and point-of-care systems for self-analysis in bioapplications, among others. © 2008 IEEE.

Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature. A lowest resistivity of∼2.8 × 10-4 ωcm was achieved for a film thickness of 1100nm (sheet resistance ∼2.5ω/□), with a Hall mobility of 18cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3. The films are polycrystalline with a hexagonal structure having a strong crystallographic c-axis orientation. A linear dependence between the mobility and the crystallite size was obtained. The films are highly transparent (between 80% and 90% including the glass substrate) in the visible spectra with a refractive index of about 2, very similar to the value reported for the bulk material. These films were applied to single glass/TCO/pin hydrogenated amorphous silicon solar cells as front layer contact, leading to solar cells with efficiencies of about 9.52%. With the optimized deposition conditions, GZO films were also deposited on polymer (PEN) substrates and the obtained results are discussed. © 2008 Elsevier B.V. All rights reserved.

This paper describes a novel colorimetric method for detection of nucleic acid targets in a homogeneous format with improved sensitivity by means of a system based on the combination of a tunable monochromatic light source and an amorphous/nanocrystalline silicon photodetector that detects color and light intensity changes undergone by samples/assays containing tailored gold nanoparticles probes. This new low cost, portable, fast and simple optoelectronic platform, with the possibility to be re-used, permits detection of at least 400 fentomole of specific DNA sequences without target or signal amplification and was applied to the rapid detection of human pathogens in large variety of clinical samples such as Mycobacterium tuberculosis. © 2008 Elsevier B.V. All rights reserved.

ZnO films were grown on sapphire (001) substrate by atmospheric MOCVD using diethyl zinc and tertiary butanol precursors. The influence of different carrier gases (H2 and He) on the properties was analyzed by their structural (XRD), microstructural (SEM) and compositional (SIMS) characterization. The intensity of the strongest diffraction peak from ZnO (002) plane was increased by about 2 orders of magnitude when He is used as carrier gas, indicating the significant enhancement in crystallinity. The surface of the samples grown using H2 and He carrier gases was composed of leaf-like and spherical grains respectively. Hydrogen [H] content in the film grown using H2 is higher than that using He, indicating that the [H] was influenced by the H2 carrier gas. Ultraviolet emission dominates the low temperature PL spectra. The emission from ZnO films grown using He show higher optical quality and more emission centers.

Transparent conductive oxides (TCOs) such as indium tin oxide (ITO) thin films onto glass substrates are widely used as transparent and conductive electrodes for a variety of technological applications including flat panel displays, solar cells, smart windows, touch screens, etc. ITO films on glass and polycarbonate (PC) substrates were prepared at room temperature (RT) and at different PO2. The films were characterized in terms of the surface roughness (δ), sheet resistance, the refractive index (n) and extinction coefficient (k). The free carrier density (nc) and the carrier mobility (μ) of the ITO (In2O3:Sn) films were measured and studied. The nc and μ values vary in different ratio of oxygen partial pressure (PO2) of ITO deposition. The observed changes in the ITO film resistivity are due to the combined effect of different parameter values for nc and μ. From AFM analysis and spectra calculations, the surface roughness values of the ITO films were studied and it was observed that the δ values were lower than 15 nm. The energy band gap Eg ranges from 3.26 eV to 3.66 eV as determined from the absorption spectrum. It was observed an increase on the energy band gap as the PO2 decrease in the range of 20-2% PO2. The Lorentz oscillator classical model has also been used to fit the ellipsometric spectra in order to obtain both refractive index n and extinction coefficient κ values. © 2008 Elsevier Ltd. All rights reserved.