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Two new Late Jurassic (uppermost Late Kimmeridgian) dinosaur eggshell sites are described, Casal da Rola and Porto das Barcas, both near Lourinha˜, central-west Portugal. Casal da Rola yields eggshells with an obliquiprismatic morphotype comparable to those from a nest with the associated fossil embryos from Paimogo, tentatively assigned to the theropod Lourinhanosaurus antunesi. The Porto das Barcas eggshells have a dendrospherulitic morphotype with a prolatocanaliculate pore system. This morphotype was also recognised in eggshells from a clutch with associated Torvosaurus embryos at the Porto das Barcas locality. A preliminary cladistic analysis of eggshell morphology suggests theropod affinities for the Casal da Rola eggs, but is unable to resolve the phylogenetic position of the Porto das Barcas eggs. The eggshells at both sites are preserved in distal flood plain mudstones and siltstones. Carbonate concretions within the deposits indicate paleosol development.

This paper analyzes transparent two-TFT current mirrors using a-GIZO TFTs with different mirroring ratios. In order to achieve a high mirroring ratio, the output TFT in the circuit employed a fingered structure layout to minimize area and overlap capacitance. The analysis of the current mirrors is performed in three phases. In the first, a radial basis function based (RBF) model is developed using measured data from fabricated TFTs on the same chip. Then, in the second phase, the RBF model is implemented in Verilog-A that is used to simulate two-TFT current mirrors with different mirroring ratios. The simulations are carried out using Cadence spectre simulator. In the third phase, simulation results are validated with the measured response from the fabricated circuits. © 2014 IEEE.

A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si: H), during annealing at a fixed temperature. H content has been measured in several a-Si: H samples ( grown by plasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 degrees C. Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 x 10(-14) cm(2)/s for intrinsic films and 4.2 x 10(-14) cm(2)/s for n-type films were obtained. Reversely, H content evolution can be predicted during a thermal treatment if diffusion coefficients are previously known. (C) 2013 Elsevier B.V. All rights reserved.

A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si: H), during annealing at a fixed temperature. H content has been measured in several a-Si: H samples ( grown by plasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 degrees C. Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 x 10(-14) cm(2)/s for intrinsic films and 4.2 x 10(-14) cm(2)/s for n-type films were obtained. Reversely, H content evolution can be predicted during a thermal treatment if diffusion coefficients are previously known. (C) 2013 Elsevier B.V. All rights reserved.