This paper deals with a new model and structure able to tailor defects in pin devices. The model assumes the usual density of states profile, including donor and acceptor like states inside the mobility gap and has the capability to simulate the transient and steady state device behavior. The new structure is based in two interfacial defectous layers, located at the junctions, acting as "gettering" centers to tailor the defects. The role of the interlayer and its thickness on device performances will be also discussed. © 1993.

The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics. © 1991.

N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels. © 1989.

In this paper we report by the first time tunneling tranport on vertical μcSi/aSixCyOz:H/μcSi (μcaμc) heterostructures produced in a Two consecutive Decomposition and Deposition Chamber system where a Negative Differential Conductance is observed even at room temperature. Giant bias anomalies are observed, that decrease with temperature. Tunneling spectroscopy data are also reported for samples measured at low temperatures. A qualitative information of the recorded data is obtained and related with main features of the heterostructure. Nevertheless in this stage is hard to take quantitative information. © 1989.