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2006
Zhang, S., Z. Hu, L. Raniero, X. Liao, I. Ferreira, E. Fortunato, P. M. Vilarinho, L. Pereira, and R. Martins. "PART 1-I-Electronic, Magnetic and Photonic Materials-The Study of High Temperature Annealing of a-SiC: H Films." Materials Science Forum. 514516 (2006): 18-22. Abstract
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Lima, M. M. R. A., and R. C. C. Monteiro. "PART 1-III-Metals, Composites and Materials for Mechanical Applications-Shrinkage Behaviour of Borosilicate Glass-Al2O3 Composites during Isothermal Sintering." Materials Science Forum. Vol. 514516. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2006. 648-652. Abstract
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Prabaharan, M., J. P. Borges, M. H. Godinho, and J. F. Mano PART 2-IV Polymers, Molecular Materials and Biomaterials-Liquid Crystalline Behaviour of Chitosan in Formic, Acetic, Monochloroacetic Acid Solutions. Vol. 514516. Materials Science Forum, 514516. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2006. Abstract
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Monteiro, R. C. C., C. S. Mota, and M. M. R. A. Lima. "PART 2-X Industrial Materials Recycling-Effect of Dolomite Addition on the Densification of Fly Ash Based Ceramics." Materials Science Forum. Vol. 514516. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2006. 1711-1715. Abstract
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Costa, Anikó, and Lu\'ıs Gomes. "Partitioning of Petri net models amenable for Distributed Execution." ETFA. 2006. 1129-1132. Abstract
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Aelenei, Daniel, and Luis Roriz. "Performance of an air based radiative cooling system." HB 2006 - Healthy Buildings. 978-989-95067-1-8. 2006. Abstract
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Martins, N., P. Canhola, M. Quintela, I. Ferreira, L. Raniero, E. Fortunato, and R. Martins. "Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cells." Thin solid films. 511 (2006): 238-242. Abstract
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c c Martins, N.a, Canhola Quintela Ferreira Raniero Fortunato Martins P. a M. b. "Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cells." Thin Solid Films. 511-512 (2006): 238-242. AbstractWebsite

This paper presents the performances of an in-line plasma enhanced chemical vapor deposition system constituted by 5 chambers and one external unloaded chamber used in the simultaneous manufacturing of 4 large (30 cm × 40 cm) solar cells deposited on glass substrates. The system is fully automatically controlled by a Programmable Logic Controller using a specific developed software that allows devices mass production without losing the flexibility to perform process innovations according to the industrial requests, i.e. fast and secure changes and optimizations. Overall, the process shift is of about 15 min per each set of 4 solar cells. Without a buffer layer, solar cells with efficiencies of about 9% were produced by the proper tuning of the i-layer production conditions. © 2005 Elsevier B.V. All rights reserved.

Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 28-32. Abstract
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Pereira, L., Barquinha Fortunato Martins P. E. R. "Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization." Materials Science Forum. 514-516 (2006): 28-32. AbstractWebsite

In this work metal induced crystallization (MIC) using nickel (Ni) was employed to obtain poly-Si by crystallization of amorphous films for application as active layer in TFTs. Ni layers with thicknesses of 0.5 nm, 1 nm and 2 nm were used to crystallize the silicon. The TFTs were produced with a bottom gate configuration using a multi-layer Al2O3/TiO2 insulator produced by atomic layer deposition (ALD) as gate dielectric. The best performances of the TFT produced were obtained when using very thin Ni layers for the crystallization. This is attributed to a lower metal contamination and to the enhancement of grain size, as a result of the lower nucleation density achieved, when using the thinnest Ni layer. Devices that exhibit effective mobility of 45.5 cm2V-1s-1 and an on/off ratio of 5.55×104 were produced using a 0.5 nm Ni layer to crystallize the active channel area.

Martins, R., Chu Fortunato Conde Ferreira V. E. J. "Preface." Journal of Non-Crystalline Solids. 352 (2006): vii. AbstractWebsite
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2005
Urze, Paula, Sónia Barroso, and António B. Moniz. "Practices and trends of telework in the Portuguese industry: the results of surveys in the textile, metal and software sectors." Enterprise and Work Innovation Studies. 1 (2005): 93-108. AbstractWebsite

The aim of the TeleRisk Project on labour relations and professional risks within the context of teleworking in Portugal – supported by IDICT – Institute for Development and Inspection of Working Conditions (Ministry of Labour), is to study the practices and forms of teleworking in the manufacturing sectors in Portugal. The project chose also the software industry as a reference sector, even though it does not intend to exclude from the study any other sector of activity or the so-called “hybrid” forms of work. However, the latter must have some of the characteristics of telework. The project thus takes into account the so-called “traditional” sectors of activity, namely textile and machinery and metal engineering (machinery and equipment), not usually associated to this type of work. However, telework could include, in the so-called “traditional” sectors, other variations that are not found in technologically based sectors. One of the evaluation methods for the dynamics associated to telework consisted in carrying out surveys by means of questionnaires, aimed at employers in the sectors analysed. This paper presents some of the results of those surveys. It is important to mention that, being a preliminary analysis, it means that it does not pretend to have exhausted all the issues in the survey, but has meant that it shows the bigger tendencies, in terms of teleworking practices, of the Portuguese industry.

Casimiro, T., A. Shariati, C. J. Peters, M. N. da Ponte, and A. Aguiar-Ricardo. "Phase behavior studies of a perfluoropolyether in high-pressure carbon dioxide." Fluid Phase Equilibria. 228-229 (2005): 367-371. AbstractWebsite
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Amado, Miguel Pires Planeamento Urbano Sustentável. Casal de Cambra - Portugal: Caleidoscópio_Edição e Artes Gráficas, SA, 2005.
Fernandes, Vítor H., Gracinda M. S. Gomes, and Manuel M. Jesus. "Presentations for some monoids of partial transformations on a finite chain." Comm. Algebra. 33 (2005): 587-604.Website
Fernandes, Vítor H., Gracinda M. S. Gomes, and Manuel M. Jesus. "Presentations for some monoids of partial transformations on a finite chain." Commun. Algebra. 33 (2005): 587-604. Abstract

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Cunha, José C., William Fleischman, João M. Lourenço, and Viera K. Proulx Proceedings of the 10th Annual SIGCSE Conference on Innovation and Technology in Computer Science Education (ITiCSE'05). Eds. José C. Cunha, William Fleischman, João Lourenço, and Viera K. Proulx. New York, NY, USA: ACM, 2005. Abstract

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J. Araújo, and M. Toro Proceedings of VIII Workshop in Requirements Engineering. Eds. J. Ara, A. Toro, and J. F. Cunha. Porto, Portugal: FEUP, 2005. Abstract

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Ortigueira, Manuel D. Processamento Digital de Sinais. Lisboa: Fundação Calouste Gulbenkian, 2005.
Pimentel, A., E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, and R. Martins. "Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices." Thin Solid Films. 487.1 (2005): 212-215. Abstract
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Pimentel, A., Fortunato Gonçalves Marques Águas Pereira Ferreira Martins E. A. A. "Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices." Thin Solid Films. 487 (2005): 212-215. AbstractWebsite

In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. © 2005 Elsevier B.V. All rights reserved.

Pimentel, A., E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, and R. Martins. "Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices." Thin Solid Films. 487 (2005): 212-215. Abstract
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