Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

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Working teams in enterprise environment are considered as the most advanced forms of work organisation. This means the forms that can improve productivity quality of working life. Nevertheless, it prevails a slow development and dissemination of these advanced organisational forms in European companies. The reason for that lays in a complex linkage factors from social values to the economical pressures. But other factors are also related to the national systems of education training, to the different systems of industrial relations and technology policy.

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In order to correlate the MIS devices performance with different surface oxidation methods, AFM, spectroscopic ellipsometry and infrared spectroscopy measurements were performed in a-Si:H films, before and after surface oxidation, using different oxidation techniques and oxides: thermal dry (in air), wet (in H2O2) and by oxygen plasma, while MIS (metal-insulator-semiconductor) devices were characterized by I-V curves, under dark and AM1.5 illumination conditions. The a-Si:H films were grown by the PECVD technique, in a modified triode configuration reactor to allow a precise control of the ion bombardment during the film deposition. We found that the growth of a thin layer of oxide by chemical processes on the top of the a-Si:H surface can cause changes on the surface morphology that are reflected in the electrical behaviour of the devices. The oxygen plasma treatment, cause the rearrangement of the surface atoms leading to a change of their morphology and to the improvement of the electrical properties of the surface for a MIS applications.

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This paper deals with the determination of plasma impedance and ion density in r.f. plasmas using different mixtures of silane with methane or ethylene and r.f. powers. The aim is to correlate these parameters with carbon and hydrogen contents of the films produced. The data achieved show that the best carbon incorporation is achieved using ethylene gas mixtures, under low gas mixture concentration, where the substrate also sustains a low ion bombardment. The data also show that particulates in the plasma can be more easily formed in the ethylene-based processes. © 2001 Published by Elsevier Science B.V.

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Hall effect measurements have been used to evaluate the conduction mechanism, exhibited by tin oxide thin film gas sensors deposited by spray pyrolysis. Two experiments have been carried out: (i) Hall measurements in air and (ii) in the presence of methane (first results reported), both as a function of temperature. From the measurements performed it was possible to infer the potential barrier and its dependence with the atmosphere used. The results obtained for the carrier concentration and mobility have been analysed in the light of the oxygen diffusion mechanism at grain boundaries by using the grain boundary-trapping model. In the presence of the methane gas the electrical resistivity decreases due to the lowering of the inter-grain boundary barrier height. © 2001 Published by Elsevier Science Ltd.

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{Nitrite reductase from the sulfate-reducing bacterium Desulfovibrio desulfuricans ATCC 27774 is a multihaem (type c) membrane-bound enzyme that catalyzes the dissimilatory conversion of nitrite to ammonia. Crystals of the oxidized form of this enzyme were obtained using PEG and CaCl2 as precipitants in the presence of 3-(decylmethylammonium)propane-1-sulfonate and belong to the space group P2(1)2(1)2(1), With unit-cell parameters a = 78.94

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One can assist to significant changes in the organisation of manufacturing systems during the last years. Lean production, network enterprise or the virtual enterprises are reference concepts of the re-organisation of manufacturing systems. Some authors mention a new enterprise paradigm, of generalisation of intelligent manufacture, organised in networks and assisted by information and communication technologies. The first part of the paper develops a critical approach to the illusion connected to these concepts, calling the attention to the diversity of the type of relationships among firms. If virtual enterprises (VE) are networks of firms with intensive usage of ICT, one can verify a predominance of a technicist perspective. This one considers that the development of VEs is a technological problem, of development and management of information systems, and of entrepreneurial share of different databases. Sociology can be useful, even fundamental in an anthropocentric approach. The last part of the paper is on the Portuguese situation in the automobile sector, approaching the types of entrepreneurial organisation.

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In order to understand the kinetics of formation of interface/surface states and its correlation on the final device performance, a preliminary study was performed on MIS structures, before and after surface oxidation/passivation, using different oxidation techniques and oxides: thermal (in air), chemical (in H2O2) and oxygen plasma. The devices used in this work are based on a glass/Cr/a-Si:H(n+)/a-Si:H(i)/SiOx/Pd structures, where the amorphous silicon intrinsic layer (i a-Si:H) with a photosensitivity of 107 was deposited by a modified plasma enhanced chemical vapour deposition (PECVD) triode system. The electrical properties of a-Si:H MIS structures were investigated by measuring their diode current-voltage characteristics in the dark and under illumination as well as the spectral response, as a function of the various oxidation techniques. Infrared spectroscopy and spectroscopic ellipsometry were used as a complementary tool to characterise the oxidised surface.

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Tetraheme cytochrome c(3) (13 kDa) and flavodoxin (16 kDa), are small electron transfer proteins that have been used to mimic, in vitro, part of the electron-transfer chain that operates between substract electron donors and respiratory electron accepters partners in Desulfovibrio species (Palma, N., Moura, I., LeGall, J., Van Beeumen, J., Wampler, J., Moura, J. J. G. (1994) Biochemistry 33, 6394-6407). The electron transfer between these two proteins is believed to occur through the formation of a specific complex where electrostatic interaction is the main driving force (Stewart, D., LeGall, J., Moura, I., Moura, J.J.G., Peck, H.D., Xavier, A.V., Weiner, P.K. and Wampler, J.E. (1988) Biochemistry 27, 2444-2450, Stewart, D., LeGall, J., Moura, I., Moura, J.J.G., Peck, H.D., Xavier, A.V., Weiner, P., Wampler, J. (1989) fur. J. Biochem. 185, 695-700). In order to obtain structural information of the pre-complex, a covalent complex between the two proteins was prepared. A water-soluble carbodiimide {[}EDC (1-ethyl-3(3 dimethylaminopropyl) carbodiimide hydrochloride] was used for the cross linking reaction. The reaction was optimized varying a wide number of experimental parameters such as ionic strength, protein and cross linker concentration, and utilization of different cross linkers and reaction time between the crosslinker and proteins. (C) 1999 Academic Press.