Let \(\gamma\) be a simple open smooth curve and \(\alpha\) be an orientation-preserving diffeomorphism of \(\gamma\) onto itself which has only two fixed points. Criteria for one-sided invertibility of the functional operator
\[
A=aI-bW,
\]
where \(a\) and \(b\) are continuous functions, \(I\) is the identity operator, \(W\) is the shift operator: \((Wf)(t)=f[\alpha(t)]\), in a reflexive rearrangement-invariant space of fundamental type \(X(\gamma)\) with nontrivial Boyd indices, are obtained.

The triple-to-double ionization cross-section ratio of Li in the high-energy limit was computed in the sudden approximation with relativistic wave functions. Together with the calculated value of Dalgarno and Sadeghpour (Phys. Rev. A, 46 (1992) R3591), for the Li double-to-single ionization cross-section ratio, the value of 6.263x10-5 was obtained for the triple-to-single ionization cross-section ratio. This value is in full agreement with Wehlitz et al. experimental value of (6.38+-2.40)x10-5 obtained recently with synchrotron radiation (Phys. Rev. Lett., 81 (1998) 1813).

The changes occurring during the heating of a borosilicate glass have been investigated by differential thermal analysis, dilatometric analysis and thermomechanical analysis. The thermal properties of this glass, such as glass transition temperature, dilatometric softening temperature and linear thermal expansion coefficient, have been determined. Viscosity measurements in the temperature range 898-1048 K were performed in a thermomechanical analyser equipped with a penetration attachment for isothermal measurement, and from the temperature dependence of viscosity a value of 290 kJ mol-1 was obtained for the activation energy for viscous flow. Devitrification of the glass was observed, specifically in finely powdered glass samples, where the precipitation of cristobalite was identified by X-ray diffraction. Glass powder compacts sintered by viscous flow and cristobalite precipitation reduced strongly the shrinkage rate. © 2001 Elsevier Science B.V.

Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Working teams in enterprise environment are considered as the most advanced forms of work organisation. This means the forms that can improve productivity quality of working life. Nevertheless, it prevails a slow development and dissemination of these advanced organisational forms in European companies. The reason for that lays in a complex linkage factors from social values to the economical pressures. But other factors are also related to the national systems of education training, to the different systems of industrial relations and technology policy.

In order to correlate the MIS devices performance with different surface oxidation methods, AFM, spectroscopic ellipsometry and infrared spectroscopy measurements were performed in a-Si:H films, before and after surface oxidation, using different oxidation techniques and oxides: thermal dry (in air), wet (in H2O2) and by oxygen plasma, while MIS (metal-insulator-semiconductor) devices were characterized by I-V curves, under dark and AM1.5 illumination conditions. The a-Si:H films were grown by the PECVD technique, in a modified triode configuration reactor to allow a precise control of the ion bombardment during the film deposition. We found that the growth of a thin layer of oxide by chemical processes on the top of the a-Si:H surface can cause changes on the surface morphology that are reflected in the electrical behaviour of the devices. The oxygen plasma treatment, cause the rearrangement of the surface atoms leading to a change of their morphology and to the improvement of the electrical properties of the surface for a MIS applications.

This paper deals with the determination of plasma impedance and ion density in r.f. plasmas using different mixtures of silane with methane or ethylene and r.f. powers. The aim is to correlate these parameters with carbon and hydrogen contents of the films produced. The data achieved show that the best carbon incorporation is achieved using ethylene gas mixtures, under low gas mixture concentration, where the substrate also sustains a low ion bombardment. The data also show that particulates in the plasma can be more easily formed in the ethylene-based processes. © 2001 Published by Elsevier Science B.V.

Hall effect measurements have been used to evaluate the conduction mechanism, exhibited by tin oxide thin film gas sensors deposited by spray pyrolysis. Two experiments have been carried out: (i) Hall measurements in air and (ii) in the presence of methane (first results reported), both as a function of temperature. From the measurements performed it was possible to infer the potential barrier and its dependence with the atmosphere used. The results obtained for the carrier concentration and mobility have been analysed in the light of the oxygen diffusion mechanism at grain boundaries by using the grain boundary-trapping model. In the presence of the methane gas the electrical resistivity decreases due to the lowering of the inter-grain boundary barrier height. © 2001 Published by Elsevier Science Ltd.