Karlovich, Alexei Yu., and Yuri I. Karlovich. "
Compactness of commutators arising in the Fredholm theory of singular integral operators with shifts."
Factorization, Singular Operators and Related Problems. Eds. Stefan Samko, Amarino Lebre, and António Ferreira dos Santos. Dordrecht: Kluwer Academic Publishers, 2003. 111-129.
AbstractThe paper is devoted to the compactness of the commutators \(aS_\Gamma - S_\Gamma aI\) and \(W_\alpha S_\Gamma - S_\Gamma W_\alpha\), where \(S_\Gamma\) is the Cauchy singular integral operator, \(a\) is a bounded measurable function, \(W_\alpha\) is the shift operator given by \(W_\alpha f = f\circ\alpha\), and \(\alpha\) is a bi-Lipschitz homeomorphism (shift). The cases of the unit circle and the unit interval are considered. We prove that these commutators are compact on rearrangement-invariant spaces with nontrivial Boyd indices if and only if the function a or, respectively, the derivative of the shift a has vanishing mean oscillation.
Fortunate, E., Assunção Marques Ferreira Águas Pereira Martins V. A. I. "
Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature."
Materials Research Society Symposium - Proceedings. Vol. 763. 2003. 225-230.
AbstractGallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.
Aguas, H., L. Pereira, A. Goullet, R. Silva, E. Fortunato, R. Martins, JR Abelson, G. Ganguly, H. Matsumura, J. Robertson, and EA Schiff. "
Correlation between the tunnelling oxide and I-V curves of MIS photodiodes."
Amorphous and Nanocrystalline Silicon-Based Films-2003. Vol. 762. 2003. 217-222.
Abstractn/a
Águas, H.a, Pereira Goullet Silva Fortunato Martins L. a A. b. "
Correlation between the Tunnelling Oxide and I-V Curves of MIS Photodiodes."
Materials Research Society Symposium - Proceedings. Vol. 762. 2003. 217-222.
AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n + (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106) and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO 2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.