Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature
- Citation:
- Fortunate, E., Assunção Marques Ferreira Águas Pereira Martins V. A. I. "Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature." Materials Research Society Symposium - Proceedings. Vol. 763. 2003. 225-230.
Abstract:
Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.
Notes:
cited By 1
Recent Publications
